Inventor
VERMA PURAKH RAJ
SG139 patents
⚠️ This page may combine multiple inventors who share the name “VERMA PURAKH RAJ”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CHARTERED SEMICONDUCTOR MFG
16 patentsUS7846805B2Dec 7, 2010
Self-aligned vertical PNP transistor for high performance SiGe CBiCMOS process
CHARTERED SEMICONDUCTOR MFG19 citations92
US6638844B1Oct 28, 2003
Method of reducing substrate coupling/noise for radio frequency CMOS (RFCMOS) components in semiconductor technology by backside trench and fill
CHARTERED SEMICONDUCTOR MFG29 citations92
US6835631B1Dec 28, 2004
Method to enhance inductor Q factor by forming air gaps below inductors
CHARTERED SEMICONDUCTOR MFG26 citations89
US6249031B1Jun 19, 2001
High gain lateral PNP and NPN bipolar transistor and process compatible with CMOS for making BiCMOS circuits
CHARTERED SEMICONDUCTOR MFG30 citations89
US6093613AJul 25, 2000
Method for making high gain lateral PNP and NPN bipolar transistor compatible with CMOS for making BICMOS circuits
CHARTERED SEMICONDUCTOR MFG18 citations89
US6372652B1Apr 16, 2002
Method for forming a thin-film, electrically blowable fuse with a reproducible blowing wattage
CHARTERED SEMICONDUCTOR MFG33 citations88
US7824968B2Nov 2, 2010
LDMOS using a combination of enhanced dielectric stress layer and dummy gates
CHARTERED SEMICONDUCTOR MFG14 citations84
US7488662B2Feb 10, 2009
Self-aligned vertical PNP transistor for high performance SiGe CBiCMOS process
CHARTERED SEMICONDUCTOR MFG15 citations84
US7022578B2Apr 4, 2006
Heterojunction bipolar transistor using reverse emitter window
CHARTERED SEMICONDUCTOR MFG18 citations83
US6486017B1Nov 26, 2002
Method of reducing substrate coupling for chip inductors by creation of dielectric islands by selective EPI deposition
CHARTERED SEMICONDUCTOR MFG15 citations82
US6972237B2Dec 6, 2005
Lateral heterojunction bipolar transistor and method of manufacture using selective epitaxial growth
CHARTERED SEMICONDUCTOR MFG7 citations74
US5982021ANov 9, 1999
Vertical polysilicon diode compatible with CMOS/BiCMOS integrated circuit processes
CHARTERED SEMICONDUCTOR MFG13 citations74
US5716880AFeb 10, 1998
Method for forming vertical polysilicon diode compatible with CMOS/BICMOS formation
CHARTERED SEMICONDUCTOR MFG6 citations74
US6861317B1Mar 1, 2005
Method of making direct contact on gate by using dielectric stop layer
CHARTERED SEMICONDUCTOR MFG10 citations72
US7410874B2Aug 12, 2008
Method of integrating triple gate oxide thickness
CHARTERED SEMICONDUCTOR MFG7 citations71
US6933188B1Aug 23, 2005
Use of a selective hard mask for the integration of double diffused drain MOS devices in deep sub-micron fabrication technologies
CHARTERED SEMICONDUCTOR MFG8 citations71
UNITED MICROELECTRONICS CORP
13 patentsUS10460980B2Oct 29, 2019
Semiconductor device comprising a deep trench isolation structure and a trap rich isolation structure in a substrate and a method of making the same
UNITED MICROELECTRONICS CORP17 citations94
US11205605B2Dec 21, 2021
Semiconductor structure with back gate and method of fabricating the same
UNITED MICROELECTRONICS CORP5 citations84
US11205609B2Dec 21, 2021
Semiconductor structure with an air gap
UNITED MICROELECTRONICS CORP7 citations83
US12191195B2Jan 7, 2025
Method of fabricating an air gap
UNITED MICROELECTRONICS CORP2 citations73
US11476363B2Oct 18, 2022
Semiconductor device and method of fabricating the same
UNITED MICROELECTRONICS CORP2 citations73
US11152485B2Oct 19, 2021
Semiconductor structure and manufacturing method thereof
UNITED MICROELECTRONICS CORP1 citations73
US11133270B1Sep 28, 2021
Integrated circuit device and fabrication method thereof
UNITED MICROELECTRONICS CORP2 citations73
US11127700B1Sep 21, 2021
Integrated circuit device
UNITED MICROELECTRONICS CORP4 citations73
US10923599B2Feb 16, 2021
Semiconductor device
UNITED MICROELECTRONICS CORP3 citations73
US10636892B2Apr 28, 2020
Semiconductor structure and manufacturing method thereof
UNITED MICROELECTRONICS CORP3 citations73
US10411110B1Sep 10, 2019
Semiconductor structure and manufacturing method thereof
UNITED MICROELECTRONICS CORP3 citations73
US11670567B2Jun 6, 2023
Semiconductor structure and method of wafer bonding
UNITED MICROELECTRONICS CORP2 citations70
US11448318B2Sep 20, 2022
Seal ring structure
UNITED MICROELECTRONICS CORP2 citations70
GLOBALFOUNDRIES SG PTE LTD
12 patentsUS9472512B1Oct 18, 2016
Integrated circuits with contacts through a buried oxide layer and methods of producing the same
GLOBALFOUNDRIES SG PTE LTD29 citations93
US9048371B2Jun 2, 2015
Semiconductor devices including avalanche photodetector diodes integrated on waveguides and methods for fabricating the same
GLOBALFOUNDRIES SG PTE LTD24 citations91
US9721969B2Aug 1, 2017
Creation of wide band gap material for integration to SOI thereof
GLOBALFOUNDRIES SG PTE LTD6 citations84
US9673084B2Jun 6, 2017
Isolation scheme for high voltage device
GLOBALFOUNDRIES SG PTE LTD13 citations83
US9105502B2Aug 11, 2015
Integrated circuit comprising on-chip resistors with plurality of first and second terminals coupled to the resistor body
GLOBALFOUNDRIES SG PTE LTD7 citations79
US9780207B2Oct 3, 2017
Self-aligned high voltage LDMOS
GLOBALFOUNDRIES SG PTE LTD2 citations73
US9087906B2Jul 21, 2015
Grounding of silicon-on-insulator structure
GLOBALFOUNDRIES SG PTE LTD6 citations73
US9842903B2Dec 12, 2017
Integrated circuits with laterally diffused metal oxide semiconductor structures and methods for fabricating the same
GLOBALFOUNDRIES SG PTE LTD6 citations71
US9660020B2May 23, 2017
Integrated circuits with laterally diffused metal oxide semiconductor structures and methods for fabricating the same
GLOBALFOUNDRIES SG PTE LTD2 citations71
US9213137B2Dec 15, 2015
Semiconductor devices including photodetectors integrated on waveguides and methods for fabricating the same
GLOBALFOUNDRIES SG PTE LTD6 citations71
US9082846B2Jul 14, 2015
Integrated circuits with laterally diffused metal oxide semiconductor structures
GLOBALFOUNDRIES SG PTE LTD5 citations71
US9997393B1Jun 12, 2018
Methods for fabricating integrated circuits including substrate contacts
GLOBALFOUNDRIES SG PTE LTD6 citations69
ZHANG GUOWEI
5 patentsUS9064894B2Jun 23, 2015
Stress enhanced high voltage device
ZHANG GUOWEI8 citations84
US8822291B2Sep 2, 2014
High voltage device
ZHANG GUOWEI12 citations84
US8222130B2Jul 17, 2012
High voltage device
ZHANG GUOWEI6 citations84
US8809150B2Aug 19, 2014
MOS with recessed lightly-doped drain
ZHANG GUOWEI5 citations83
US8790966B2Jul 29, 2014
High voltage device
ZHANG GUOWEI8 citations83
VERMA PURAKH RAJ
4 patentsUS8288235B2Oct 16, 2012
Self-aligned body fully isolated device
VERMA PURAKH RAJ6 citations84
US8637370B2Jan 28, 2014
Integration of trench MOS with low voltage integrated circuits
VERMA PURAKH RAJ13 citations80
US8802484B1Aug 12, 2014
Integration of germanium photo detector in CMOS processing
VERMA PURAKH RAJ4 citations71
US8999769B2Apr 7, 2015
Integration of high voltage trench transistor with low voltage CMOS transistor
VERMA PURAKH RAJ4 citations70
Showing the top 50 of 139 patents by PatentIndex Score.