Inventor
KRUEGEL STEPHAN
DE14 patents
⚠️ This page may combine multiple inventors who share the name “KRUEGEL STEPHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
11 patentsUS6812115B2Nov 2, 2004
Method of filling an opening in a material layer with an insulating material
ADVANCED MICRO DEVICES INC26 citations92
US6566718B2May 20, 2003
Field effect transistor with an improved gate contact and method of fabricating the same
ADVANCED MICRO DEVICES INC33 citations92
US7332384B2Feb 19, 2008
Technique for forming a substrate having crystalline semiconductor regions of different characteristics
ADVANCED MICRO DEVICES INC32 citations91
US6821887B2Nov 23, 2004
Method of forming a metal silicide gate in a standard MOS process sequence
ADVANCED MICRO DEVICES INC18 citations84
US6943088B2Sep 13, 2005
Method of manufacturing a trench isolation structure for a semiconductor device with a different degree of corner rounding
ADVANCED MICRO DEVICES INC14 citations83
US6849516B2Feb 1, 2005
Methods of forming drain/source extension structures of a field effect transistor using a doped high-k dielectric layer
ADVANCED MICRO DEVICES INC11 citations74
US6798028B2Sep 28, 2004
Field effect transistor with reduced gate delay and method of fabricating the same
ADVANCED MICRO DEVICES INC12 citations74
US6703278B2Mar 9, 2004
Method of forming layers of oxide on a surface of a substrate
ADVANCED MICRO DEVICES INC7 citations73
US7358150B2Apr 15, 2008
Trench isolation structure for a semiconductor device with reduced sidewall stress and a method of manufacturing the same
ADVANCED MICRO DEVICES INC7 citations70
US6900111B2May 31, 2005
Method of forming a thin oxide layer having improved reliability on a semiconductor surface
ADVANCED MICRO DEVICES INC0 citations51
US7858526B2Dec 28, 2010
Method of patterning gate electrodes by reducing sidewall angles of a mask layer
ADVANCED MICRO DEVICES INC0 citations48
GLOBALFOUNDRIES INC
2 patentsUS8048792B2Nov 1, 2011
Superior fill conditions in a replacement gate approach by corner rounding prior to completely removing a placeholder material
GLOBALFOUNDRIES INC14 citations83
US8735270B2May 27, 2014
Method for making high-K metal gate electrode structures by separate removal of placeholder materials
GLOBALFOUNDRIES INC2 citations62