Inventor
OTANI YOICHI
US15 patents
⚠️ This page may combine multiple inventors who share the name “OTANI YOICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
9 patentsUS7816728B2Oct 19, 2010
Structure and method of fabricating high-density trench-based non-volatile random access SONOS memory cells for SOC applications
IBM45 citations96
US8008713B2Aug 30, 2011
Vertical SOI trench SONOS cell
IBM37 citations92
US7575970B2Aug 18, 2009
Deep trench capacitor through SOI substrate and methods of forming
IBM20 citations92
US7514323B2Apr 7, 2009
Vertical SOI trench SONOS cell
IBM22 citations92
US7078756B2Jul 18, 2006
Collarless trench DRAM device
IBM12 citations84
US6268293B1Jul 31, 2001
Method of forming wires on an integrated circuit chip
IBM8 citations70
US7807526B2Oct 5, 2010
Method of fabricating high-density, trench-based non-volatile random access SONOS memory cells for SOC applications
IBM4 citations63
US7595232B2Sep 29, 2009
CMOS devices incorporating hybrid orientation technology (HOT) with embedded connectors
IBM3 citations63
US7893485B2Feb 22, 2011
Vertical SOI trench SONOS cell
IBM0 citations42
INFINEON TECHNOLOGIES AG
3 patentsUS6258658B1Jul 10, 2001
Memory cell configuration and corresponding fabrication method
INFINEON TECHNOLOGIES AG26 citations91
US6472696B1Oct 29, 2002
Memory cell configuration and corresponding production process
INFINEON TECHNOLOGIES AG5 citations60
US7230877B1Jun 12, 2007
Method of making a semiconductor memory device
INFINEON TECHNOLOGIES AG1 citations46