Inventor
NAM GAB-JIN
KR20 patents
⚠️ This page may combine multiple inventors who share the name “NAM GAB-JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS7482677B2Jan 27, 2009
Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structures
SAMSUNG ELECTRONICS CO LTD88 citations98
US6599807B2Jul 29, 2003
Method for manufacturing capacitor of semiconductor device having improved leakage current characteristics
SAMSUNG ELECTRONICS CO LTD33 citations92
US7646067B2Jan 12, 2010
Complementary metal-oxide-semiconductor transistor including multiple gate conductive layers and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US7144771B2Dec 5, 2006
Methods of forming electronic devices including dielectric layers with different densities of titanium
SAMSUNG ELECTRONICS CO LTD12 citations84
US7396719B2Jul 8, 2008
Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric film
SAMSUNG ELECTRONICS CO LTD18 citations83
US9368589B2Jun 14, 2016
Semiconductor device and semiconductor module
SAMSUNG ELECTRONICS CO LTD10 citations82
US6992346B2Jan 31, 2006
Integrated circuit devices with metal-insulator-metal capacitors
SAMSUNG ELECTRONICS CO LTD9 citations74
US9634144B2Apr 25, 2017
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations70
US7442981B2Oct 28, 2008
Capacitor of semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7585756B2Sep 8, 2009
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations62
US7135422B2Nov 14, 2006
Methods of forming a multi-layered structure using an atomic layer deposition process and methods of forming a capacitor of an integrated circuit device
SAMSUNG ELECTRONICS CO LTD4 citations62
US7696563B2Apr 13, 2010
Non-volatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7648874B2Jan 19, 2010
Method of forming a dielectric structure having a high dielectric constant and method of manufacturing a semiconductor device having the dielectric structure
SAMSUNG ELECTRONICS CO LTD0 citations52
US7338863B2Mar 4, 2008
Semiconductor memory device and method of manufacturing the semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US9443735B2Sep 13, 2016
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations51
US7910421B2Mar 22, 2011
Methods of forming devices including different gate insulating layers on PMOS/NMOS regions
SAMSUNG ELECTRONICS CO LTD0 citations49