P

Inventor

KIM KI-CHUL

KR100 patents
⚠️ This page may combine multiple inventors who share the name “KIM KI-CHUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

33 patents
US9281277B2Mar 8, 2016

Methods of forming wiring structures

SAMSUNG ELECTRONICS CO LTD491 citations98
US7183172B2Feb 27, 2007

Method of forming silicon-on-insulator (SOI) semiconductor substrate and SOI semiconductor substrate formed thereby

SAMSUNG ELECTRONICS CO LTD95 citations98
US6815764B2Nov 9, 2004

Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD71 citations98
US7120135B2Oct 10, 2006

Wire/wireless unified in-building communication method and system

SAMSUNG ELECTRONICS CO LTD40 citations93
US7045424B2May 16, 2006

Method of fabricating local SONOS type gate structure and method of fabricating nonvolatile memory cell having the same

SAMSUNG ELECTRONICS CO LTD37 citations93
US6815320B2Nov 9, 2004

Method for fabricating semiconductor device including gate spacer

SAMSUNG ELECTRONICS CO LTD24 citations93
US6806517B2Oct 19, 2004

Flash memory having local SONOS structure using notched gate and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD47 citations93
US7271055B2Sep 18, 2007

Methods of forming low leakage currents metal-insulator-metal (MIM) capacitors and related MIM capacitors

SAMSUNG ELECTRONICS CO LTD26 citations92
US6696328B2Feb 24, 2004

CMOS gate electrode using selective growth and a fabrication method thereof

SAMSUNG ELECTRONICS CO LTD24 citations92
US7684435B2Mar 23, 2010

Base station system for mobile communication

SAMSUNG ELECTRONICS CO LTD26 citations91
US7202524B2Apr 10, 2007

Nonvolatile memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD42 citations91
US7144771B2Dec 5, 2006

Methods of forming electronic devices including dielectric layers with different densities of titanium

SAMSUNG ELECTRONICS CO LTD12 citations84
US7045850B2May 16, 2006

Semiconductor device with floating trap type nonvolatile memory cell and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD14 citations84
US7396719B2Jul 8, 2008

Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric film

SAMSUNG ELECTRONICS CO LTD18 citations83
US7184316B2Feb 27, 2007

Non-volatile memory cell array having common drain lines and method of operating the same

SAMSUNG ELECTRONICS CO LTD11 citations83
US7273822B2Sep 25, 2007

Methods and apparatus for forming thin films for semiconductor devices

SAMSUNG ELECTRONICS CO LTD9 citations74
US6998309B2Feb 14, 2006

Method of manufacturing a non-volatile semiconductor memory device

SAMSUNG ELECTRONICS CO LTD8 citations74
US6992346B2Jan 31, 2006

Integrated circuit devices with metal-insulator-metal capacitors

SAMSUNG ELECTRONICS CO LTD9 citations74
US9110233B2Aug 18, 2015

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD4 citations73
US7722926B2May 25, 2010

Organometallic compounds and methods of forming thin films including the use of the same

SAMSUNG ELECTRONICS CO LTD6 citations73
US7642148B2Jan 5, 2010

Methods of producing semiconductor devices including multiple stress films in interface area

SAMSUNG ELECTRONICS CO LTD7 citations73
US7420243B2Sep 2, 2008

Non-volatile memory device with buried control gate and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD8 citations73
US7361560B2Apr 22, 2008

Method of manufacturing a dielectric layer in a memory device that includes nitriding step

SAMSUNG ELECTRONICS CO LTD8 citations73
US10669631B2Jun 2, 2020

Gas injection apparatus and thin film deposition equipment including the same

SAMSUNG ELECTRONICS CO LTD3 citations71
US7674714B2Mar 9, 2010

Method of fabricating semiconductor devices having a gate silicide

SAMSUNG ELECTRONICS CO LTD2 citations63
US7432183B2Oct 7, 2008

Methods of manufacturing a thin film including zirconium titanium oxide and methods of manufacturing a gate structure, a capacitor and a flash memory device including the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7371640B2May 13, 2008

Semiconductor device with floating trap type nonvolatile memory cell and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7217669B2May 15, 2007

Method of forming a metal oxide film

SAMSUNG ELECTRONICS CO LTD4 citations63
US7092298B2Aug 15, 2006

Methods of erasing a non-volatile memory device having discrete charge trap sites

SAMSUNG ELECTRONICS CO LTD4 citations63
US7060563B2Jun 13, 2006

Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US6878580B2Apr 12, 2005

Semiconductor device having gate with negative slope and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US6800570B2Oct 5, 2004

Method of forming a metal oxide film

SAMSUNG ELECTRONICS CO LTD3 citations63
US9316789B2Apr 19, 2016

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations62

AMOSENSE CO LTD

6 patents

KOREA ELECTRONICS TELECOMM

2 patents

KIM KI-CHUL

2 patents

(unassigned)

1 patent

KIM KI CHUL

1 patent

SKYCROSS INC

1 patent

YOON JUN-HO

1 patent

LEE JAE-PIL

1 patent

COWAY CO LTD

1 patent

SEO IN SEOK

1 patent

Showing the top 50 of 100 patents by PatentIndex Score.