Inventor

LIM JAE-SOON

KR33 patents

⚠️ This page may combine multiple inventors who share the name “LIM JAE-SOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIM JAE-SOON

SAMSUNG ELECTRONICS CO LTD

Method of forming thin film using atomic layer deposition method

Methods of forming low leakage currents metal-insulator-metal (MIM) capacitors and related MIM capacitors

Method for manufacturing capacitor of semiconductor device having improved leakage current characteristics

Multi-layer film for a thin film structure and a capacitor using the same

Methods of fabricating trench capacitors with insulating layer collars in undercut regions

Methods of forming electronic devices including dielectric layers with different densities of titanium

Methods of manufacturing integrated circuit capacitors having hemispherical grain electrodes

Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric film

Integrated circuit devices with metal-insulator-metal capacitors

Organometallic compounds and methods of forming thin films including the use of the same

Tantalum compound and methods of forming thin film and fabricating integrated circuit device by using the same

Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compound

Aluminum compound, method of forming thin film by using the same, and method of fabricating integrated circuit device

Methods of forming thin film and fabricating integrated circuit device using niobium compound

Trench capacitors with insulating layer collars in undercut regions

Methods of manufacturing a thin film including zirconium titanium oxide and methods of manufacturing a gate structure, a capacitor and a flash memory device including the same

Methods of forming a capacitor using an atomic layer deposition process

Multi-layer film for thin film structure, capacitor using the same and fabrication method thereof

Method of forming tin-containing material film and method of synthesizing a tin compound

Aluminum compound and methods of forming thin film and fabricating integrated circuit device by using the same

Methods of forming a multi-layered structure using an atomic layer deposition process and methods of forming a capacitor of an integrated circuit device

Method of fabricating semiconductor device

Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same

Methods of forming dielectric layers and methods of manufacturing semiconductor devices using the same

Method of forming a thin film

Tantalum compound

Method of forming thin film and method of manufacturing integrated circuit device using the same

Lanthanum compound, method of synthesizing lanthanum compound, lanthanum precursor composition, method of forming thin film, and method of manufacturing integrated circuit device

Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same

KIM YOUN-SOO

Method of fabricating semiconductor device having dielectric layer with improved electrical characteristics

LIM JAE-SOON

ALD method of forming thin film comprising a metal

PARK MIN-YOUNG

Method of fabricating semiconductor device

KANG SANG-YEOL

Methods of forming dielectric layers and methods of manufacturing semiconductor devices using the same