P

Inventor

KIM SUNG-TAE

KR192 patents
⚠️ This page may combine multiple inventors who share the name “KIM SUNG-TAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

27 patents
US6970482B2Nov 29, 2005

Apparatus and method for demultiplexing of transport stream

SAMSUNG ELECTRONICS CO LTD148 citations99
US7482677B2Jan 27, 2009

Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structures

SAMSUNG ELECTRONICS CO LTD88 citations98
US6620681B1Sep 16, 2003

Semiconductor device having desired gate profile and method of making the same

SAMSUNG ELECTRONICS CO LTD107 citations98
US5822012AOct 13, 1998

Home automation apparatus using a digital television receiver

SAMSUNG ELECTRONICS CO LTD103 citations98
US5324679AJun 28, 1994

Method for manufacturing a semiconductor device having increased surface area conductive layer

SAMSUNG ELECTRONICS CO LTD84 citations96
US5227322AJul 13, 1993

Method for manufacturing a highly integrated semiconductor device having a capacitor of large capacitance

SAMSUNG ELECTRONICS CO LTD72 citations96
US7087482B2Aug 8, 2006

Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD44 citations95
US5227651AJul 13, 1993

Semiconductor device having a capacitor with an electrode grown through pinholes

SAMSUNG ELECTRONICS CO LTD68 citations95
US7674685B2Mar 9, 2010

Semiconductor device isolation structures and methods of fabricating such structures

SAMSUNG ELECTRONICS CO LTD21 citations92
US6946342B2Sep 20, 2005

Semiconductor device and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD22 citations92
US6897106B2May 24, 2005

Capacitor of semiconductor memory device that has composite Al2O3/HfO2 dielectric layer and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD29 citations92
US6599807B2Jul 29, 2003

Method for manufacturing capacitor of semiconductor device having improved leakage current characteristics

SAMSUNG ELECTRONICS CO LTD33 citations92
US5234857AAug 10, 1993

Method of making semiconductor device having a capacitor of large capacitance

SAMSUNG ELECTRONICS CO LTD31 citations91
US9800373B2Oct 24, 2017

Device and method for communicating channel state information reference signal (CSI-RS) in wireless communication system

SAMSUNG ELECTRONICS CO LTD3 citations84
US9287905B2Mar 15, 2016

Method and apparatus for transmitting CSI-RS and data using partial muting of CSI-RS

SAMSUNG ELECTRONICS CO LTD8 citations84
US9077519B2Jul 7, 2015

Method for processing CSI-RS in wireless communication system

SAMSUNG ELECTRONICS CO LTD8 citations84
US8355367B2Jan 15, 2013

Method and apparatus for transmitting/receiving a reference signal in a wireless communication system

SAMSUNG ELECTRONICS CO LTD13 citations84
US7615817B2Nov 10, 2009

Methods of manufacturing semiconductor devices and semiconductor devices manufactured using such a method

SAMSUNG ELECTRONICS CO LTD14 citations84
US7510931B2Mar 31, 2009

Method of fabricating a nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD11 citations84
US7354821B2Apr 8, 2008

Methods of fabricating trench capacitors with insulating layer collars in undercut regions

SAMSUNG ELECTRONICS CO LTD10 citations84
US7144771B2Dec 5, 2006

Methods of forming electronic devices including dielectric layers with different densities of titanium

SAMSUNG ELECTRONICS CO LTD12 citations84
US6680251B2Jan 20, 2004

Methods of chemical vapor depositing ruthenium by varying chemical vapor deposition parameters

SAMSUNG ELECTRONICS CO LTD16 citations84
US6333227B1Dec 25, 2001

Methods of forming hemispherical grain silicon electrodes by crystallizing the necks thereof

SAMSUNG ELECTRONICS CO LTD15 citations84
US7413314B2Aug 19, 2008

Optical system with iris controlled in real time

SAMSUNG ELECTRONICS CO LTD12 citations83
US7396719B2Jul 8, 2008

Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric film

SAMSUNG ELECTRONICS CO LTD18 citations83
US7094712B2Aug 22, 2006

High performance MIS capacitor with HfO2 dielectric

SAMSUNG ELECTRONICS CO LTD10 citations74
US7049232B2May 23, 2006

Methods for forming ruthenium films with β-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the same

SAMSUNG ELECTRONICS CO LTD8 citations74

LG ELECTRONICS INC

11 patents

KIM SUNG TAE

4 patents

KIM YOUN SUN

2 patents

LG HOUSEHOLD & HEALTH CARE LTD

1 patent

(unassigned)

1 patent

LG CABLE & MACHINERY LTD

1 patent

LEE IN HO

1 patent

MAENG JONG SUN

1 patent

LG SEMICON CO LTD

1 patent

Showing the top 50 of 192 patents by PatentIndex Score.