Inventor
LIU ZHIZHENG
US50 patents
⚠️ This page may combine multiple inventors who share the name “LIU ZHIZHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SPANSION LLC
27 patentsUS7042766B1May 9, 2006
Method of programming a flash memory device using multilevel charge storage
SPANSION LLC128 citations98
US7120063B1Oct 10, 2006
Flash memory cell and methods for programming and erasing
SPANSION LLC52 citations96
US7619932B2Nov 17, 2009
Algorithm for charge loss reduction and Vt distribution improvement
SPANSION LLC42 citations89
US7394702B2Jul 1, 2008
Methods for erasing and programming memory devices
SPANSION LLC12 citations84
US7285827B1Oct 23, 2007
Back-to-back NPN/PNP protection diodes
SPANSION LLC14 citations84
US7679967B2Mar 16, 2010
Controlling AC disturbance while programming
SPANSION LLC10 citations83
US7215577B2May 8, 2007
Flash memory cell and methods for programming and erasing
SPANSION LLC7 citations74
US7042767B2May 9, 2006
Flash memory unit and method of programming a flash memory device
SPANSION LLC10 citations74
US7746698B2Jun 29, 2010
Programming in memory devices using source bitline voltage bias
SPANSION LLC7 citations72
US7750407B2Jul 6, 2010
Strapping contact for charge protection
SPANSION LLC4 citations63
US7561457B2Jul 14, 2009
Select transistor using buried bit line from core
SPANSION LLC4 citations63
US7626869B2Dec 1, 2009
Multi-phase wordline erasing for flash memory
SPANSION LLC3 citations62
US7553727B2Jun 30, 2009
Using implanted poly-1 to improve charging protection in dual-poly process
SPANSION LLC2 citations62
US7986562B2Jul 26, 2011
Controlling AC disturbance while programming
SPANSION LLC2 citations61
US7995386B2Aug 9, 2011
Applying negative gate voltage to wordlines adjacent to wordline associated with read or verify to reduce adjacent wordline disturb
SPANSION LLC2 citations60
US7977218B2Jul 12, 2011
Thin oxide dummy tiling as charge protection
SPANSION LLC3 citations60
US7952938B2May 31, 2011
Selective application of word line bias to minimize fringe effects in electromagnetic fields during erase of nonvolatile memory
SPANSION LLC3 citations60
US7804125B2Sep 28, 2010
System and method for reducing process-induced charging
SPANSION LLC2 citations60
US7262095B1Aug 28, 2007
System and method for reducing process-induced charging
SPANSION LLC2 citations60
US7746705B2Jun 29, 2010
Selective application of word line bias to minimize fringe effects in electromagnetic fields during erase of nonvolatile memory
SPANSION LLC4 citations59
US7944746B2May 17, 2011
Room temperature drift suppression via soft program after erase
SPANSION LLC6 citations52
US7573103B1Aug 11, 2009
Back-to-back NPN/PNP protection diodes
SPANSION LLC0 citations52
US7269067B2Sep 11, 2007
Programming a memory device
SPANSION LLC1 citations52
US9142311B2Sep 22, 2015
Screening for reference cells in a memory
SPANSION LLC0 citations47
US8995198B1Mar 31, 2015
Multi-pass soft programming
SPANSION LLC1 citations45
US7888218B2Feb 15, 2011
Using thick spacer for bitline implant then remove
SPANSION LLC0 citations42
US7671405B2Mar 2, 2010
Deep bitline implant to avoid program disturb
SPANSION LLC0 citations42
ADVANCED MICRO DEVICES INC
12 patentsUS6639844B1Oct 28, 2003
Overerase correction method
ADVANCED MICRO DEVICES INC84 citations98
US6834012B1Dec 21, 2004
Memory device and methods of using negative gate stress to correct over-erased memory cells
ADVANCED MICRO DEVICES INC74 citations96
US6795342B1Sep 21, 2004
System for programming a non-volatile memory cell
ADVANCED MICRO DEVICES INC30 citations93
US6967873B2Nov 22, 2005
Memory device and method using positive gate stress to recover overerased cell
ADVANCED MICRO DEVICES INC41 citations92
US6934190B1Aug 23, 2005
Ramp source hot-hole programming for trap based non-volatile memory devices
ADVANCED MICRO DEVICES INC31 citations92
US6897110B1May 24, 2005
Method of protecting a memory array from charge damage during fabrication
ADVANCED MICRO DEVICES INC22 citations92
US6869844B1Mar 22, 2005
Method and structure for protecting NROM devices from induced charge damage during device fabrication
ADVANCED MICRO DEVICES INC23 citations92
US6797565B1Sep 28, 2004
Methods for fabricating and planarizing dual poly scalable SONOS flash memory
ADVANCED MICRO DEVICES INC28 citations92
US6768160B1Jul 27, 2004
Non-volatile memory cell and method of programming for improved data retention
ADVANCED MICRO DEVICES INC52 citations92
US6628545B1Sep 30, 2003
Memory circuit for suppressing bit line current leakage
ADVANCED MICRO DEVICES INC16 citations84
US6788583B2Sep 7, 2004
Pre-charge method for reading a non-volatile memory cell
ADVANCED MICRO DEVICES INC14 citations83
US6906959B2Jun 14, 2005
Method and system for erasing a nitride memory device
ADVANCED MICRO DEVICES INC9 citations74