P

Inventor

LIN CHUN-JUN

TW17 patents
⚠️ This page may combine multiple inventors who share the name “LIN CHUN-JUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

12 patents
US12520520B2Jan 6, 2026

Isolation structure for isolating source/drain region structure from adjacent source/drain structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12300698B2May 13, 2025

Isolation structure for preventing unintentional merging of epitaxially grown source/drain

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11990525B2May 21, 2024

Isolation structure for isolating epitaxially grown source/drain regions and method of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11749683B2Sep 5, 2023

Isolation structure for preventing unintentional merging of epitaxially grown source/drain

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11349002B2May 31, 2022

Isolation structure for for isolating epitaxially grown source/drain regions and method of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11315924B2Apr 26, 2022

Isolation structure for preventing unintentional merging of epitaxially grown source/drain

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12317567B2May 27, 2025

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12557375B2Feb 17, 2026

Semiconductor devices and methods of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US12336282B2Jun 17, 2025

Semiconductor device having different source/drain junction depths and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12205849B2Jan 21, 2025

Semiconductor device structure with source/drain structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12414355B2Sep 9, 2025

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US12581705B2Mar 17, 2026

Semiconductor device including multiple stacks of semiconductor nanosheets, multiple strained layers, and dielectric wall located strained layers and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48

IND TECH RES INST

5 patents