Inventor
FULFORD H JAMES
US3 patents
Patents
3 patentsUS6207485B1Mar 27, 2001
Integration of high K spacers for dual gate oxide channel fabrication technique
ADVANCED MICRO DEVICES INC58 citations94
US6127235AOct 3, 2000
Method for making asymmetrical gate oxide thickness in channel MOSFET region
ADVANCED MICRO DEVICES INC26 citations91
US6767794B2Jul 27, 2004
Method of making ultra thin oxide formation using selective etchback technique integrated with thin nitride layer for high performance MOSFET
ADVANCED MICRO DEVICES INC7 citations72