Inventor

HOBART KARL D

US66 patents

⚠️ This page may combine multiple inventors who share the name “HOBART KARL D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HOBART KARL D

US NAVY

Electronic device with composite substrate

Single-crystal material on non-single-crystalline substrate

Fabrication ultra-thin bonded semiconductor layers

Method for fabricating singe crystal materials over CMOS devices

Method for making electro-optical devices using a hydrogenion splitting technique

Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting

Automatically sharp field emission cathodes

Wafer bonding of thinned electronic materials and circuits to high performance substrates

Vertical conducting power semiconductor devices implemented by deep etch

Method for making pyroelectric, electro-optical and decoupling capacitors using thin film transfer and hydrogen ion splitting techniques

Method for making shallow diffusion junctions in semiconductors using elemental doping

Transistor with enhanced channel charge inducing material layer and threshold voltage control

Atomically sharp field emission cathodes

Vertical conducting power semiconducting devices made by deep reactive ion etching

Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices

Neutron detector with gamma ray isolation

Low temperature hydrophobic direct wafer bonding

Damage-free plasma-enhanced CVD passivation of AlGaN/GaN high electron mobility transistors

Transistor with diamond gate

Growth of high-performance III-nitride transistor passivation layer for GaN electronics

Method of mediating forward voltage drift in a SiC device

Diamond air bridge for thermal management of high power devices

Neutron detector with gamma ray isolation

US GOV SEC NAVY

Material structure and method for deep silicon carbide etching

Mapping and evaluating GaN wafers for vertical device applications

Light controlled switch module

Wafer-scale separation and transfer of GaN material

Silicon carbide structure, device, and method

Heterojunction devices and methods for fabricating the same

High electron mobility transistors and methods for fabricating the same

Heterojunction devices and methods for fabricating the same

Polarization-engineered heterogeneous semiconductor heterostructures

Low resistance photoconductive semiconductor switch (PCSS)

Diamond on nanopatterned substrate

KUB FRANCIS J

III-nitride P-channel field effect transistor with hole carriers in the channel

Transistor with enhanced channel charge inducing material layer and threshold voltage control

Semiconductor structure or device integrated with diamond

Light-emitting devices with integrated diamond

Inverted III-nitride P-channel field effect transistor with hole carriers in the channel

Graphene on semiconductor detector

Transistor with enhanced channel charge inducing material layer and threshold voltage control

Graphene on semiconductor detector

Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channel

HOBART KARL D

Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates

Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates

Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices

CALDWELL JOSHUA D

Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates

CHARLES STARK DRAPER LABORATORY INC

Whole angle MEMS gyroscope on hexagonal crystal substrate

KOEHLER ANDREW D

Transistor with diamond gate

THE GOVERNMENT OF THE US SECRETARY OF THE NAVY

Methods of forming semiconductor devices including self-aligned p-type and n-type doped regions