Inventor
LIM SANGWOO
US11 patents
⚠️ This page may combine multiple inventors who share the name “LIM SANGWOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
7 patentsUS7402472B2Jul 22, 2008
Method of making a nitrided gate dielectric
FREESCALE SEMICONDUCTOR INC9 citations83
US7338894B2Mar 4, 2008
Semiconductor device having nitridated oxide layer and method therefor
FREESCALE SEMICONDUCTOR INC12 citations83
US7504289B2Mar 17, 2009
Process for forming an electronic device including transistor structures with sidewall spacers
FREESCALE SEMICONDUCTOR INC7 citations73
US7781831B2Aug 24, 2010
Semiconductor device having nitridated oxide layer and method therefor
FREESCALE SEMICONDUCTOR INC4 citations62
US7214590B2May 8, 2007
Method of forming an electronic device
FREESCALE SEMICONDUCTOR INC5 citations61
US7126172B2Oct 24, 2006
Integration of multiple gate dielectrics by surface protection
FREESCALE SEMICONDUCTOR INC2 citations61
US7041562B2May 9, 2006
Method for forming multiple gate oxide thickness utilizing ashing and cleaning
FREESCALE SEMICONDUCTOR INC6 citations61