Inventor
STEIMLE ROBERT F
US39 patents
⚠️ This page may combine multiple inventors who share the name “STEIMLE ROBERT F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
30 patentsUS6903967B2Jun 7, 2005
Memory with charge storage locations and adjacent gate structures
FREESCALE SEMICONDUCTOR INC57 citations96
US7192876B2Mar 20, 2007
Transistor with independent gate structures
FREESCALE SEMICONDUCTOR INC23 citations93
US7091130B1Aug 15, 2006
Method of forming a nanocluster charge storage device
FREESCALE SEMICONDUCTOR INC32 citations93
US7524719B2Apr 28, 2009
Method of making self-aligned split gate memory cell
FREESCALE SEMICONDUCTOR INC38 citations92
US7456465B2Nov 25, 2008
Split gate memory cell and method therefor
FREESCALE SEMICONDUCTOR INC19 citations92
US7416945B1Aug 26, 2008
Method for forming a split gate memory device
FREESCALE SEMICONDUCTOR INC35 citations92
US7361543B2Apr 22, 2008
Method of forming a nanocluster charge storage device
FREESCALE SEMICONDUCTOR INC24 citations92
US7183159B2Feb 27, 2007
Method of forming an integrated circuit having nanocluster devices and non-nanocluster devices
FREESCALE SEMICONDUCTOR INC41 citations92
US7091089B2Aug 15, 2006
Method of forming a nanocluster charge storage device
FREESCALE SEMICONDUCTOR INC36 citations92
US6964902B2Nov 15, 2005
Method for removing nanoclusters from selected regions
FREESCALE SEMICONDUCTOR INC20 citations92
US6958265B2Oct 25, 2005
Semiconductor device with nanoclusters
FREESCALE SEMICONDUCTOR INC48 citations92
US7700439B2Apr 20, 2010
Silicided nonvolatile memory and method of making same
FREESCALE SEMICONDUCTOR INC10 citations84
US7579243B2Aug 25, 2009
Split gate memory cell method
FREESCALE SEMICONDUCTOR INC18 citations84
US7445984B2Nov 4, 2008
Method for removing nanoclusters from selected regions
FREESCALE SEMICONDUCTOR INC10 citations83
US7432158B1Oct 7, 2008
Method for retaining nanocluster size and electrical characteristics during processing
FREESCALE SEMICONDUCTOR INC11 citations83
US7338894B2Mar 4, 2008
Semiconductor device having nitridated oxide layer and method therefor
FREESCALE SEMICONDUCTOR INC12 citations83
US9443782B1Sep 13, 2016
Method of bond pad protection during wafer processing
FREESCALE SEMICONDUCTOR INC15 citations81
US7341914B2Mar 11, 2008
Method for forming a non-volatile memory and a peripheral device on a semiconductor substrate
FREESCALE SEMICONDUCTOR INC8 citations74
US7186616B2Mar 6, 2007
Method of removing nanoclusters in a semiconductor device
FREESCALE SEMICONDUCTOR INC9 citations74
US9550664B2Jan 24, 2017
Reducing MEMS stiction by increasing surface roughness
FREESCALE SEMICONDUCTOR INC2 citations72
US7732278B2Jun 8, 2010
Split gate memory cell and method therefor
FREESCALE SEMICONDUCTOR INC5 citations63
US7838363B2Nov 23, 2010
Method of forming a split gate non-volatile memory cell
FREESCALE SEMICONDUCTOR INC5 citations62
US7781831B2Aug 24, 2010
Semiconductor device having nitridated oxide layer and method therefor
FREESCALE SEMICONDUCTOR INC4 citations62
US8373221B2Feb 12, 2013
Nanocluster charge storage device
FREESCALE SEMICONDUCTOR INC0 citations52
US9988260B2Jun 5, 2018
Rough MEMS surface
FREESCALE SEMICONDUCTOR INC1 citations51
US9776853B2Oct 3, 2017
Reducing MEMS stiction by deposition of nanoclusters
FREESCALE SEMICONDUCTOR INC1 citations51
US9458010B1Oct 4, 2016
Systems and methods for anchoring components in MEMS semiconductor devices
FREESCALE SEMICONDUCTOR INC0 citations51
US9425115B2Aug 23, 2016
Glass frit wafer bond protective structure
FREESCALE SEMICONDUCTOR INC0 citations51
US9637372B2May 2, 2017
Bonded wafer structure having cavities with low pressure and method for forming
FREESCALE SEMICONDUCTOR INC1 citations48
US7160775B2Jan 9, 2007
Method of discharging a semiconductor device
FREESCALE SEMICONDUCTOR INC0 citations42
STEIMLE ROBERT F
3 patentsUS9463976B2Oct 11, 2016
MEMS fabrication process with two cavities operating at different pressures
STEIMLE ROBERT F4 citations70
US9434602B2Sep 6, 2016
Reducing MEMS stiction by deposition of nanoclusters
STEIMLE ROBERT F0 citations49
US9290380B2Mar 22, 2016
Reducing MEMS stiction by deposition of nanoclusters
STEIMLE ROBERT F1 citations49
MONTEZ RUBEN B
3 patentsUS8633088B2Jan 21, 2014
Glass frit wafer bond protective structure
MONTEZ RUBEN B2 citations61
US9463973B2Oct 11, 2016
Reducing MEMS stiction by introduction of a carbon barrier
MONTEZ RUBEN B0 citations51
US8895339B2Nov 25, 2014
Reducing MEMS stiction by introduction of a carbon barrier
MONTEZ RUBEN B1 citations51