P

Inventor

STEIMLE ROBERT F

US39 patents
⚠️ This page may combine multiple inventors who share the name “STEIMLE ROBERT F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FREESCALE SEMICONDUCTOR INC

30 patents
US6903967B2Jun 7, 2005

Memory with charge storage locations and adjacent gate structures

FREESCALE SEMICONDUCTOR INC57 citations96
US7192876B2Mar 20, 2007

Transistor with independent gate structures

FREESCALE SEMICONDUCTOR INC23 citations93
US7091130B1Aug 15, 2006

Method of forming a nanocluster charge storage device

FREESCALE SEMICONDUCTOR INC32 citations93
US7524719B2Apr 28, 2009

Method of making self-aligned split gate memory cell

FREESCALE SEMICONDUCTOR INC38 citations92
US7456465B2Nov 25, 2008

Split gate memory cell and method therefor

FREESCALE SEMICONDUCTOR INC19 citations92
US7416945B1Aug 26, 2008

Method for forming a split gate memory device

FREESCALE SEMICONDUCTOR INC35 citations92
US7361543B2Apr 22, 2008

Method of forming a nanocluster charge storage device

FREESCALE SEMICONDUCTOR INC24 citations92
US7183159B2Feb 27, 2007

Method of forming an integrated circuit having nanocluster devices and non-nanocluster devices

FREESCALE SEMICONDUCTOR INC41 citations92
US7091089B2Aug 15, 2006

Method of forming a nanocluster charge storage device

FREESCALE SEMICONDUCTOR INC36 citations92
US6964902B2Nov 15, 2005

Method for removing nanoclusters from selected regions

FREESCALE SEMICONDUCTOR INC20 citations92
US6958265B2Oct 25, 2005

Semiconductor device with nanoclusters

FREESCALE SEMICONDUCTOR INC48 citations92
US7700439B2Apr 20, 2010

Silicided nonvolatile memory and method of making same

FREESCALE SEMICONDUCTOR INC10 citations84
US7579243B2Aug 25, 2009

Split gate memory cell method

FREESCALE SEMICONDUCTOR INC18 citations84
US7445984B2Nov 4, 2008

Method for removing nanoclusters from selected regions

FREESCALE SEMICONDUCTOR INC10 citations83
US7432158B1Oct 7, 2008

Method for retaining nanocluster size and electrical characteristics during processing

FREESCALE SEMICONDUCTOR INC11 citations83
US7338894B2Mar 4, 2008

Semiconductor device having nitridated oxide layer and method therefor

FREESCALE SEMICONDUCTOR INC12 citations83
US9443782B1Sep 13, 2016

Method of bond pad protection during wafer processing

FREESCALE SEMICONDUCTOR INC15 citations81
US7341914B2Mar 11, 2008

Method for forming a non-volatile memory and a peripheral device on a semiconductor substrate

FREESCALE SEMICONDUCTOR INC8 citations74
US7186616B2Mar 6, 2007

Method of removing nanoclusters in a semiconductor device

FREESCALE SEMICONDUCTOR INC9 citations74
US9550664B2Jan 24, 2017

Reducing MEMS stiction by increasing surface roughness

FREESCALE SEMICONDUCTOR INC2 citations72
US7732278B2Jun 8, 2010

Split gate memory cell and method therefor

FREESCALE SEMICONDUCTOR INC5 citations63
US7838363B2Nov 23, 2010

Method of forming a split gate non-volatile memory cell

FREESCALE SEMICONDUCTOR INC5 citations62
US7781831B2Aug 24, 2010

Semiconductor device having nitridated oxide layer and method therefor

FREESCALE SEMICONDUCTOR INC4 citations62
US8373221B2Feb 12, 2013

Nanocluster charge storage device

FREESCALE SEMICONDUCTOR INC0 citations52
US9988260B2Jun 5, 2018

Rough MEMS surface

FREESCALE SEMICONDUCTOR INC1 citations51
US9776853B2Oct 3, 2017

Reducing MEMS stiction by deposition of nanoclusters

FREESCALE SEMICONDUCTOR INC1 citations51
US9458010B1Oct 4, 2016

Systems and methods for anchoring components in MEMS semiconductor devices

FREESCALE SEMICONDUCTOR INC0 citations51
US9425115B2Aug 23, 2016

Glass frit wafer bond protective structure

FREESCALE SEMICONDUCTOR INC0 citations51
US9637372B2May 2, 2017

Bonded wafer structure having cavities with low pressure and method for forming

FREESCALE SEMICONDUCTOR INC1 citations48
US7160775B2Jan 9, 2007

Method of discharging a semiconductor device

FREESCALE SEMICONDUCTOR INC0 citations42

STEIMLE ROBERT F

3 patents

MONTEZ RUBEN B

3 patents

MOTOROLA INC

1 patent

HANNA JEFFREY D

1 patent

KARLIN LISA H

1 patent