Inventor · disambiguated record
Waldemar Walter Kocon
Also filed as: KOCON WALDEMAR · KOCON WALDEMAR W · KOCON WALDEMAR WALTER
14 granted patents·1 pending application·1,237 citations·filing 1995–2008
95Inventor score
Top patents by PatentIndex Score
15 records- 0198US6077745ASelf-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell arrayIBM·Filed 1997·Granted Jun 20, 2000·277 cites·14 claims
- 0297US5874760A4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolationIBM·Filed 1997·Granted Feb 23, 1999·240 cites·10 claims
- 0396US5929477ASelf-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell arrayIBM·Filed 1997·Granted Jul 27, 1999·192 cites·9 claims
- 0493US6034389ASelf-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell arrayIBM·Filed 1997·Granted Mar 7, 2000·154 cites·11 claims
- 0591US6033957A4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolationIBM·Filed 1997·Granted Mar 7, 2000·81 cites·10 claims
- 0689US6013548ASelf-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell arrayIBM·Filed 1997·Granted Jan 11, 2000·99 cites·12 claims
- 0775US7855137B2Method of making a sidewall-protected metallic pillar on a semiconductor substrateIBM·Filed 2008·Granted Dec 21, 2010·6 cites·17 claims
- 0875US5895273ASilicon sidewall etchingIBM·Filed 1997·Granted Apr 20, 1999·48 cites·20 claims
- 0967US6461529B1Anisotropic nitride etch process with high selectivity to oxide and photoresist layers in a damascene etch schemeIBM·Filed 1999·Granted Oct 8, 2002·34 cites·4 claims
- 1067US5874363APolycide etching with HCL and chlorineTOSHIBA KK·Filed 1996·Granted Feb 23, 1999·35 cites·10 claims
- 1165US6268226B1Reactive ion etch loading measurement techniqueIBM·Filed 1999·Granted Jul 31, 2001·31 cites·19 claims
- 1251US5670018AIsotropic silicon etch process that is highly selective to tungstenSIEMENS AG·Filed 1995·Granted Sep 23, 1997·21 cites·20 claims
- 1350US5759920AProcess for making doped polysilicon layers on sidewallsIBM·Filed 1996·Granted Jun 2, 1998·15 cites·21 claims
- 1436US2002067133A1Method for lighting an inductively coupled plasma at low pressureFiled 2000·Application pending·0 cites
- 1535US6375859B1Process for resist clean up of metal structures on polyimideIBM·Filed 1999·Granted Apr 23, 2002·4 cites·25 claims
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