Inventor · disambiguated record
Kent Kuohua Chang
Also filed as: CHANG KENT · CHANG KENT K · CHANG KENT KUOHUA
82 granted patents·25 pending applications·2,250 citations·filing 1997–2013
99Inventor score
Files withMACRONIX INT CO LTD51ADVANCED MICRO DEVICES INC38CHANG CHAO-FU2CHANG KENT KUOHUA2MACRONIX INTERNAT CO INC1
Top patents by PatentIndex Score
107 records- 0198US6486028B1Method of fabricating a nitride read-only-memory cell vertical structureMACRONIX INT CO LTD·Filed 2001·Granted Nov 26, 2002·190 cites·20 claims
- 0298US6487114B2Method of reading two-bit memories of NROM cellMACRONIX INT CO LTD·Filed 2001·Granted Nov 26, 2002·378 cites·28 claims
- 0397US6602805B2Method for forming gate dielectric layer in NROMMACRONIX INT CO LTD·Filed 2000·Granted Aug 5, 2003·151 cites·7 claims
- 0497US6461949B1Method for fabricating a nitride read-only-memory (NROM)MACRONIX INT CO LTD·Filed 2001·Granted Oct 8, 2002·140 cites·2 claims
- 0593US6348381B1Method for forming a nonvolatile memory with optimum bias conditionMACRONIX INT CO LTD·Filed 2001·Granted Feb 19, 2002·66 cites·10 claims
- 0693US6074917ALPCVD oxide and RTA for top oxide of ONO film to improve reliability for flash memory devicesADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 13, 2000·165 cites·20 claims
- 0792US6858506B2Method for fabricating locally strained channelMACRONIX INT CO LTD·Filed 2003·Granted Feb 22, 2005·64 cites·23 claims
- 0892US6380033B1Process to improve read disturb for NAND flash memory devicesADVANCED MICRO DEVICES INC·Filed 1999·Granted Apr 30, 2002·94 cites·12 claims
- 0990US6063666ARTCVD oxide and N2 O anneal for top oxide of ONO filmADVANCED MICRO DEVICES INC·Filed 1998·Granted May 16, 2000·127 cites·19 claims
- 1088US6218689B1Method for providing a dopant level for polysilicon for flash memory devicesADVANCED MICRO DEVICES INC·Filed 1999·Granted Apr 17, 2001·64 cites·30 claims
- 1187US6180454B1Method for forming flash memory devicesADVANCED MICRO DEVICES INC·Filed 1999·Granted Jan 30, 2001·62 cites·20 claims
- 1286US6235586B1Thin floating gate and conductive select gate in situ doped amorphous silicon material for NAND type flash memory device applicationsADVANCED MICRO DEVICES INC·Filed 1999·Granted May 22, 2001·59 cites·20 claims
- 1384US6599801B1Method of fabricating NROM memory cellMACRONIX INT CO LTD·Filed 2002·Granted Jul 29, 2003·26 cites·20 claims
- 1483US6538292B2Twin bit cell flash memory deviceMACRONIX INT CO LTD·Filed 2001·Granted Mar 25, 2003·35 cites·6 claims
- 1582US6548425B2Method for fabricating an ONO layer of an NROMMACRONIX INT CO LTD·Filed 2001·Granted Apr 15, 2003·27 cites·12 claims
- 1678US6455890B1Structure of fabricating high gate performance for NROM technologyMACRONIX INT CO LTD·Filed 2001·Granted Sep 24, 2002·28 cites·13 claims
- 1777US6143608ABarrier layer decreases nitrogen contamination of peripheral gate regions during tunnel oxide nitridationADVANCED MICRO DEVICES INC·Filed 1999·Granted Nov 7, 2000·39 cites·24 claims
- 1876US6720613B1Method of fabricating multi-bit flash memoryMACRONIX INT CO LTD·Filed 2003·Granted Apr 13, 2004·18 cites·7 claims
- 1976US6204159B1Method of forming select gate to improve reliability and performance for NAND type flash memory devicesADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 20, 2001·36 cites·20 claims
- 2075US7229876B2Method of fabricating memoryMACRONIX INT CO LTD·Filed 2005·Granted Jun 12, 2007·4 cites·20 claims
- 2175US6420237B1Method of manufacturing twin bit cell flash memory deviceMACRONIX INT CO LTD·Filed 2001·Granted Jul 16, 2002·17 cites·17 claims
- 2273US6797567B2High-K tunneling dielectric for read only memory device and fabrication method thereofMACRONIX INT CO LTD·Filed 2002·Granted Sep 28, 2004·15 cites·13 claims
- 2372US7157333B1Non-volatile memory and fabricating method thereofMACRONIX INT CO LTD·Filed 2005·Granted Jan 2, 2007·4 cites·10 claims
- 2472US6674133B2Twin bit cell flash memory deviceMACRONIX INT CO LTD·Filed 2002·Granted Jan 6, 2004·14 cites·9 claims
- 2569US6362049B1High yield performance semiconductor process flow for NAND flash memory productsADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 26, 2002·27 cites·62 claims
- 2669US6153470AFloating gate engineering to improve tunnel oxide reliability for flash memory devicesADVANCED MICRO DEVICES INC·Filed 1999·Granted Nov 28, 2000·28 cites·21 claims
- 2767US6867463B2Silicon nitride read-only-memoryMACRONIX INT CO LTD·Filed 2002·Granted Mar 15, 2005·12 cites·12 claims
- 2867US6737324B2Method for fabricating raised source/drain of semiconductor deviceMACRONIX INT CO LTD·Filed 2002·Granted May 18, 2004·12 cites·28 claims
- 2967US6221164B1Method of in-situ cleaning for LPCVD teos pumpADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 24, 2001·9 cites·17 claims
- 3065US6380029B1Method of forming ono stacked films and DCS tungsten silicide gate to improve polycide gate performance for flash memory devicesADVANCED MICRO DEVICES INC·Filed 1998·Granted Apr 30, 2002·23 cites·20 claims
- 3164US7408220B2Non-volatile memory and fabricating method thereofMACRONIX INT CO LTD·Filed 2006·Granted Aug 5, 2008·2 cites·7 claims
- 3264US6589835B2Method of manufacturing flash memoryMACRONIX INT CO LTD·Filed 2001·Granted Jul 8, 2003·9 cites·20 claims
- 3364US6448136B1Method of manufacturing flash memoryMACRONIX INT CO LTD·Filed 2001·Granted Sep 10, 2002·11 cites·20 claims
- 3464US6324092B1Random access memory cellMACRONIX INT CO LTD·Filed 2001·Granted Nov 27, 2001·14 cites·7 claims
- 3563US6812521B1Method and apparatus for improved performance of flash memory cell devicesADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 2, 2004·14 cites·6 claims
- 3663US6713388B2Method of fabricating a non-volatile memory device to eliminate charge lossMACRONIX INT CO LTD·Filed 2002·Granted Mar 30, 2004·11 cites·17 claims
- 3762US6355522B1Effect of doped amorphous Si thickness on better poly 1 contact resistance performance for nand type flash memory devicesADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 12, 2002·21 cites·28 claims
- 3861US6500711B1Fabrication method for an interpoly dielectric layerMACRONIX INT CO LTD·Filed 2002·Granted Dec 31, 2002·7 cites·24 claims
- 3961US6309927B1Method of forming high K tantalum pentoxide Ta2O5 instead of ONO stacked films to increase coupling ratio and improve reliability for flash memory devicesADVANCED MICRO DEVICES INC·Filed 1999·Granted Oct 30, 2001·20 cites·30 claims
- 4059US6624460B1Memory device with low resistance buried bit linesMACRONIX INT CO LTD·Filed 2002·Granted Sep 23, 2003·8 cites·6 claims
- 4159US6580639B1Method of reducing program disturbs in NAND type flash memory devicesADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 17, 2003·22 cites·10 claims
- 4258US7009245B2High-K tunneling dielectric for read only memory device and fabrication method thereofMACRONIX INT CO LTD·Filed 2004·Granted Mar 7, 2006·6 cites·9 claims
- 4358US6762467B2Nonvolatile memory cell for prevention of second bit effectMACRONIX INT CO LTD·Filed 2003·Granted Jul 13, 2004·8 cites·8 claims
- 4457US6838345B2SiN ROM and method of fabricating the sameMACRONIX INT CO LTD·Filed 2002·Granted Jan 4, 2005·7 cites·19 claims
- 4556US6620698B1Method of manufacturing a flash memoryMACRONIX INT CO LTD·Filed 2002·Granted Sep 16, 2003·7 cites·20 claims
- 4656US6376309B2Method for reduced gate aspect ratio to improve gap-fill after spacer etchADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 23, 2002·6 cites·11 claims
- 4754US6812099B2Method for fabricating non-volatile memory having P-type floating gateMACRONIX INT CO LTD·Filed 2002·Granted Nov 2, 2004·6 cites·20 claims
- 4854US5981339ANarrower erase distribution for flash memory by smaller poly grain sizeADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 9, 1999·15 cites·13 claims
- 4953US7344938B2Method of fabricating memoryMACRONIX INT CO LTD·Filed 2007·Granted Mar 18, 2008·0 cites·20 claims
- 5053US6162684AAmmonia annealed and wet oxidized LPCVD oxide to replace ono films for high integrated flash memory devicesADVANCED MICRO DEVICES INC·Filed 1999·Granted Dec 19, 2000·18 cites·20 claims
Showing the top 50 of 107 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →