Inventor
FEEZELL DANIEL F
US30 patents
⚠️ This page may combine multiple inventors who share the name “FEEZELL DANIEL F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RARING JAMES W
8 patentsUS8259769B1Sep 4, 2012
Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates
RARING JAMES W234 citations99
US8634442B1Jan 21, 2014
Optical device structure using GaN substrates for laser applications
RARING JAMES W78 citations98
US8422525B1Apr 16, 2013
Optical device structure using miscut GaN substrates for laser applications
RARING JAMES W216 citations98
US8143148B1Mar 27, 2012
Self-aligned multi-dielectric-layer lift off process for laser diode stripes
RARING JAMES W241 citations98
US9531164B2Dec 27, 2016
Optical device structure using GaN substrates for laser applications
RARING JAMES W46 citations94
US8847249B2Sep 30, 2014
Solid-state optical device having enhanced indium content in active regions
RARING JAMES W46 citations94
US8728842B2May 20, 2014
Self-aligned multi-dielectric-layer lift off process for laser diode stripes
RARING JAMES W25 citations92
US8767787B1Jul 1, 2014
Integrated laser diodes with quality facets on GaN substrates
RARING JAMES W9 citations84
UNIV CALIFORNIA
8 patentsUS9147733B2Sep 29, 2015
Method for the reuse of gallium nitride epitaxial substrates
UNIV CALIFORNIA4 citations83
US9136673B2Sep 15, 2015
Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser
UNIV CALIFORNIA7 citations83
US8866149B2Oct 21, 2014
Method for the reuse of gallium nitride epitaxial substrates
UNIV CALIFORNIA9 citations83
US7480322B2Jan 20, 2009
Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser
UNIV CALIFORNIA7 citations73
US9773704B2Sep 26, 2017
Method for the reuse of gallium nitride epitaxial substrates
UNIV CALIFORNIA2 citations72
US7839903B2Nov 23, 2010
Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers
UNIV CALIFORNIA2 citations63
US9640947B2May 2, 2017
Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser
UNIV CALIFORNIA0 citations51
US9396943B2Jul 19, 2016
Method for the reuse of gallium nitride epitaxial substrates
UNIV CALIFORNIA0 citations51
SORAA INC
5 patentsUS8618560B2Dec 31, 2013
Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
SORAA INC25 citations93
US9000466B1Apr 7, 2015
Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
SORAA INC27 citations91
USRE47241EFeb 12, 2019
Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
SORAA INC4 citations73
US10043946B2Aug 7, 2018
Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
SORAA INC0 citations52
US9406843B2Aug 2, 2016
Methods and devices for light extraction from a Group III-nitride volumetric LED using surface and sidewall roughening
SORAA INC0 citations52