Inventor

GRILL ALFRED

US198 patents

Patents

50 patents

US6541398B2Apr 1, 2003

Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same

IBM150 citations99

US6479110B2Nov 12, 2002

Multiphase low dielectric constant material and method of deposition

IBM175 citations99

US6441491B1Aug 27, 2002

Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same

IBM187 citations99

US6437443B1Aug 20, 2002

Multiphase low dielectric constant material and method of deposition

IBM152 citations99

US6413852B1Jul 2, 2002

Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material

IBM264 citations99

US6312793B1Nov 6, 2001

Multiphase low dielectric constant material

IBM320 citations99

US6140226AOct 31, 2000

Dual damascene processing for semiconductor chip interconnects

IBM363 citations99

US5625233AApr 29, 1997

Thin film multi-layer oxygen diffusion barrier consisting of refractory metal, refractory metal aluminide, and aluminum oxide

IBM116 citations99

US8927968B2Jan 6, 2015

Accurate control of distance between suspended semiconductor nanowires and substrate surface

IBM87 citations98

US7491658B2Feb 17, 2009

Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality

IBM63 citations98

US7282458B2Oct 16, 2007

Low K and ultra low K SiCOH dielectric films and methods to form the same

IBM97 citations98

US7049247B2May 23, 2006

Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made

IBM558 citations98

US7030468B2Apr 18, 2006

Low k and ultra low k SiCOH dielectric films and methods to form the same

IBM71 citations98

US6774010B2Aug 10, 2004

Transferable device-containing layer for silicon-on-insulator applications

IBM376 citations98

US6756323B2Jun 29, 2004

Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device

IBM73 citations98

US6593625B2Jul 15, 2003

Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing

IBM182 citations98

US6515335B1Feb 4, 2003

Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same

IBM214 citations98

US6448176B1Sep 10, 2002

Dual damascene processing for semiconductor chip interconnects

IBM102 citations98

US6316167B1Nov 13, 2001

Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof

IBM189 citations98

US6265779B1Jul 24, 2001

Method and material for integration of fuorine-containing low-k dielectrics

IBM139 citations98

US6147009ANov 14, 2000

Hydrogenated oxidized silicon carbon material

IBM641 citations98

US5869880AFeb 9, 1999

Structure and fabrication method for stackable, air-gap-containing low epsilon dielectric layers

IBM108 citations98

US5796166AAug 18, 1998

Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing

IBM90 citations97

US6815329B2Nov 9, 2004

Multilayer interconnect structure containing air gaps and method for making

IBM105 citations97

US6709903B2Mar 23, 2004

Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing

IBM86 citations97

US6514667B2Feb 4, 2003

Tunable vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and applications thereof

IBM108 citations97

US6497963B1Dec 24, 2002

Hydrogenated oxidized silicon carbon material

IBM84 citations97

US6790789B2Sep 14, 2004

Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made

IBM55 citations96

US6737727B2May 18, 2004

Electronic structures with reduced capacitance

IBM44 citations96

US6737725B2May 18, 2004

Multilevel interconnect structure containing air gaps and method for making

IBM70 citations96

US6428894B1Aug 6, 2002

Tunable and removable plasma deposited antireflective coatings

IBM146 citations96

US6346747B1Feb 12, 2002

Method for fabricating a thermally stable diamond-like carbon film as an intralevel or interlevel dielectric in a semiconductor device and device made

IBM59 citations96

US5981000ANov 9, 1999

Method for fabricating a thermally stable diamond-like carbon film

IBM55 citations96

US5945155AAug 31, 1999

Low dielectric constant amorphous fluorinated carbon and method of preparation

IBM73 citations96

US5942328AAug 24, 1999

Low dielectric constant amorphous fluorinated carbon and method of preparation

IBM34 citations96

US5776823AJul 7, 1998

Tasin oxygen diffusion barrier in multilayer structures

IBM67 citations96

US5639316AJun 17, 1997

Thin film multi-layer oxygen diffusion barrier consisting of aluminum on refractory metal

IBM76 citations96

US5576579ANov 19, 1996

Tasin oxygen diffusion barrier in multilayer structures

IBM83 citations96

US5462784AOct 31, 1995

Fluorinated diamond-like carbon protective coating for magnetic recording media devices

IBM47 citations96

US5159508AOct 27, 1992

Magnetic head slider having a protective coating thereon

IBM111 citations96

US6740535B2May 25, 2004

Enhanced T-gate structure for modulation doped field effect transistors

IBM53 citations95

US6448655B1Sep 10, 2002

Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation

IBM50 citations95

US5679269AOct 21, 1997

Diamond-like carbon for use in VLSI and ULSI interconnect systems

IBM66 citations95

US5674355AOct 7, 1997

Diamond-like carbon for use in VLSI and ULSI interconnect systems

IBM46 citations95

US5302266AApr 12, 1994

Method and apparatus for filing high aspect patterns with metal

IBM119 citations95

US7138697B2Nov 21, 2006

Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector

IBM54 citations94

Showing the top 50 of 198 patents by PatentIndex Score.

GRILL ALFRED

Patents

Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same

Multiphase low dielectric constant material and method of deposition

Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same

Multiphase low dielectric constant material and method of deposition

Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material

Multiphase low dielectric constant material

Dual damascene processing for semiconductor chip interconnects

Thin film multi-layer oxygen diffusion barrier consisting of refractory metal, refractory metal aluminide, and aluminum oxide

Accurate control of distance between suspended semiconductor nanowires and substrate surface

Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality

Low K and ultra low K SiCOH dielectric films and methods to form the same

Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made

Low k and ultra low k SiCOH dielectric films and methods to form the same

Transferable device-containing layer for silicon-on-insulator applications

Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device

Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing

Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same

Dual damascene processing for semiconductor chip interconnects

Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof

Method and material for integration of fuorine-containing low-k dielectrics

Hydrogenated oxidized silicon carbon material

Structure and fabrication method for stackable, air-gap-containing low epsilon dielectric layers

Tasin oxygen diffusion barrier in multilayer structures

Plating of noble metal electrodes for DRAM and FRAM

Diamond-like carbon for use in VLSI and ULSI interconnect systems

High area capacitor formation using material dependent etching

Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing

Multilayer interconnect structure containing air gaps and method for making

Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing

Tunable vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and applications thereof

Hydrogenated oxidized silicon carbon material

Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made

Electronic structures with reduced capacitance

Multilevel interconnect structure containing air gaps and method for making

Tunable and removable plasma deposited antireflective coatings

Method for fabricating a thermally stable diamond-like carbon film as an intralevel or interlevel dielectric in a semiconductor device and device made

Method for fabricating a thermally stable diamond-like carbon film

Low dielectric constant amorphous fluorinated carbon and method of preparation

Low dielectric constant amorphous fluorinated carbon and method of preparation

Tasin oxygen diffusion barrier in multilayer structures

Thin film multi-layer oxygen diffusion barrier consisting of aluminum on refractory metal

Tasin oxygen diffusion barrier in multilayer structures

Fluorinated diamond-like carbon protective coating for magnetic recording media devices

Magnetic head slider having a protective coating thereon

Enhanced T-gate structure for modulation doped field effect transistors

Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation

Diamond-like carbon for use in VLSI and ULSI interconnect systems

Diamond-like carbon for use in VLSI and ULSI interconnect systems

Method and apparatus for filing high aspect patterns with metal

Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector