Inventor
SUITA MUNEYOSHI
JP4 patents
Patents
4 patentsUS8035130B2Oct 11, 2011
Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity region
MITSUBISHI ELECTRIC CORP16 citations82
US11107685B2Aug 31, 2021
Semiconductor manufacturing method and semiconductor manufacturing device
MITSUBISHI ELECTRIC CORP4 citations70
US8987125B2Mar 24, 2015
Method for manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP1 citations49
US9893210B2Feb 13, 2018
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP0 citations48