Inventor

KREUPL FRANZ

DE55 patents

⚠️ This page may combine multiple inventors who share the name “KREUPL FRANZ”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KREUPL FRANZ

INFINEON TECHNOLOGIES AG

Electronic device and method for fabricating an electronic device

Field effect transistor

Resistivity changing memory cell having nanowire electrode

Electronic chip and electronic chip assembly

Magnetic memory unit and magnetic memory array

Electronic component comprising an electrically conductive connection consisting of carbon nanotubes and a method for producing the same

Field effect transistor and method for producing a field effect transistor

Magnetoresistive memory cell with polarity-dependent resistance

Method for fabricating memory cells and memory cell array

Method for producing an integrated circuit having at least one metalicized surface

IC chip with nanowires

Vertical interconnect structure, memory device and associated production method

Integrated electronic component

Nanotube array and method for producing a nanotube array

Process for producing and removing a mask layer

Method for fabricating a semiconductor memory component

KREUPL FRANZ

Memory cell with silicon-containing carbon switching layer and methods for forming the same

Memory cell with resistance-switching layers and lateral arrangement

Memory cell with resistance-switching layers

Composition of memory cell with resistance-switching layers

Forming and training processes for resistance-change memory cell

Memory cell with resistance-switching layers including breakdown layer

Semiconductor chip with integrated via

Semiconductor power switch having nanowires

Modifiable gate stack memory element

Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same

QIMONDA AG

Carbon diode array for resistivity changing memories

Carbon memory

Carbon filament memory and fabrication method

Method for fabricating a nanoelement field effect transistor with surrounded gate structure

Method for fabricating a nanoelement field effect transistor with surrounded gate structure

Integrated circuit having a magnetic tunnel junction device and method

Vertically integrated field-effect transistor having a nanostructure therein

Modifiable gate stack memory element

Magnetoresistive sensor with tunnel barrier and method

SANDISK 3D LLC

Non-volatile storage with metal oxide switching element and methods for fabricating the same

Bottom electrodes for use with metal oxide resistivity switching layers

Trap passivation in memory cell with metal oxide switching element

SEKAR DEEPAK C

Resistance-switching memory cell with heavily doped metal oxide layer

Non-volatile storage with metal oxide switching element and methods for fabricating the same

INFINEON TECHNOLOGIES INC

Non-volatile memory cell, memory cell arrangement and method for production of a non-volatile memory cell

GUTSCHE MARTIN

Vertical interconnect structure, memory device and associated production method

ANDRES DIETER

Integrated circuit

STEINHOEGL WERNER

Method of producing a layered arrangement and layered arrangement

BANDYOPADHYAY ABHIJIT

Carbon/tunneling-barrier/carbon diode

SEKAR DEEPAK CHANDRA

Bottom electrodes for use with metal oxide resistivity switching layers

HAPP THOMAS

Resistive memory devices with improved resistive changing elements

LEE SANGHYUN

P-/Metal floating gate non-volatile storage element

RISING SILICON INC

Method of producing a layer arrangement, method of producing an electrical component, layer arrangement, and electrical component

KLOSTERMANN ULRICH

Integrated circuit including doped semiconductor line having conductive cladding