Inventor
COSTA XIYING
US39 patents
⚠️ This page may combine multiple inventors who share the name “COSTA XIYING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK TECHNOLOGIES INC
20 patentsUS8878278B2Nov 4, 2014
Compact three dimensional vertical NAND and method of making thereof
SANDISK TECHNOLOGIES INC136 citations99
US8884357B2Nov 11, 2014
Vertical NAND and method of making thereof using sequential stack etching and landing pad
SANDISK TECHNOLOGIES INC106 citations98
US9460799B1Oct 4, 2016
Recovery of partially programmed block in non-volatile memory
SANDISK TECHNOLOGIES INC45 citations94
US9515080B2Dec 6, 2016
Vertical NAND and method of making thereof using sequential stack etching and landing pad
SANDISK TECHNOLOGIES INC20 citations93
US9099202B2Aug 4, 2015
3D stacked non-volatile storage programming to conductive state
SANDISK TECHNOLOGIES INC24 citations93
US9330778B2May 3, 2016
Group word line erase and erase-verify methods for 3D non-volatile memory
SANDISK TECHNOLOGIES INC15 citations92
US8913431B1Dec 16, 2014
Pseudo block operation mode in 3D NAND
SANDISK TECHNOLOGIES INC28 citations92
US8885412B2Nov 11, 2014
Erase operation with controlled select gate voltage for 3D non-volatile memory
SANDISK TECHNOLOGIES INC18 citations92
US8824211B1Sep 2, 2014
Group word line erase and erase-verify methods for 3D non-volatile memory
SANDISK TECHNOLOGIES INC16 citations92
US9331090B2May 3, 2016
Compact three dimensional vertical NAND and method of making thereof
SANDISK TECHNOLOGIES INC15 citations84
US9240241B2Jan 19, 2016
Pseudo block operation mode in 3D NAND
SANDISK TECHNOLOGIES INC8 citations84
US9142304B2Sep 22, 2015
Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage current
SANDISK TECHNOLOGIES INC11 citations84
US8649219B2Feb 11, 2014
Erase inhibit for 3D non-volatile memory
SANDISK TECHNOLOGIES INC12 citations84
US8923054B1Dec 30, 2014
Pseudo block operation mode in 3D NAND
SANDISK TECHNOLOGIES INC7 citations81
US9136022B2Sep 15, 2015
Selection of data for redundancy calculation by likely error rate
SANDISK TECHNOLOGIES INC4 citations73
US8879333B2Nov 4, 2014
Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bits
SANDISK TECHNOLOGIES INC4 citations73
US8908444B2Dec 9, 2014
Erase for 3D non-volatile memory with sequential selection of word lines
SANDISK TECHNOLOGIES INC4 citations72
US8861280B2Oct 14, 2014
Erase for 3D non-volatile memory with sequential selection of word lines
SANDISK TECHNOLOGIES INC5 citations72
US9047973B2Jun 2, 2015
Group word line erase and erase-verify methods for 3D non-volatile memory
SANDISK TECHNOLOGIES INC3 citations63
US9177673B2Nov 3, 2015
Selection of data for redundancy calculation by likely error rate
SANDISK TECHNOLOGIES INC0 citations52
SANDISK TECHNOLOGIES LLC
6 patentsUS10056399B2Aug 21, 2018
Three-dimensional memory devices containing inter-tier dummy memory cells and methods of making the same
SANDISK TECHNOLOGIES LLC24 citations94
US9672917B1Jun 6, 2017
Stacked vertical memory array architectures, systems and methods
SANDISK TECHNOLOGIES LLC23 citations94
US10388390B2Aug 20, 2019
Word line dependent pass voltages in non-volatile memory
SANDISK TECHNOLOGIES LLC6 citations84
US10355007B2Jul 16, 2019
Three-dimensional memory structure having a back gate electrode
SANDISK TECHNOLOGIES LLC6 citations84
US10283208B2May 7, 2019
Word line dependent pass voltages in non-volatile memory
SANDISK TECHNOLOGIES LLC2 citations73
US10049758B2Aug 14, 2018
Word line dependent pass voltages in non-volatile memory
SANDISK TECHNOLOGIES LLC1 citations63
COSTA XIYING
4 patentsUS9019775B2Apr 28, 2015
Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage current
COSTA XIYING37 citations93
US8787094B2Jul 22, 2014
Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bits
COSTA XIYING24 citations92
US8934292B2Jan 13, 2015
Balanced method for programming multi-layer cell memories
COSTA XIYING23 citations88
US8883589B2Nov 11, 2014
Counter doping compensation methods to improve diode performance
COSTA XIYING2 citations61
LI HAIBO
3 patentsUS8867271B2Oct 21, 2014
Threshold voltage adjustment for a select gate transistor in a stacked non-volatile memory device
LI HAIBO32 citations94
US8488382B1Jul 16, 2013
Erase inhibit for 3D non-volatile memory
LI HAIBO33 citations92
US8908435B2Dec 9, 2014
Erase operation with controlled select gate voltage for 3D non-volatile memory
LI HAIBO16 citations82
INTERMOLECULAR INC
2 patentsXU HUIWEN
2 patentsUS8551855B2Oct 8, 2013
Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same
XU HUIWEN11 citations84
US8481396B2Jul 9, 2013
Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same
XU HUIWEN2 citations58