Inventor
HSU WAH NAM
US17 patents
⚠️ This page may combine multiple inventors who share the name “HSU WAH NAM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
QUALCOMM INC
10 patentsUS10210920B1Feb 19, 2019
Magnetic tunnel junction (MTJ) devices with varied breakdown voltages in different memory arrays fabricated in a same semiconductor die to facilitate different memory applications
QUALCOMM INC25 citations94
US8797792B2Aug 5, 2014
Non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
QUALCOMM INC6 citations83
US10811068B2Oct 20, 2020
Varying energy barriers of magnetic tunnel junctions (MTJs) in different magneto-resistive random access memory (MRAM) arrays in a semiconductor die to facilitate use of MRAM for different memory applications
QUALCOMM INC2 citations73
US10431278B2Oct 1, 2019
Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for ambient temperature
QUALCOMM INC3 citations73
US9966149B2May 8, 2018
OTP cell with reversed MTJ connection
QUALCOMM INC2 citations73
US9679663B2Jun 13, 2017
OTP cell with reversed MTJ connection
QUALCOMM INC3 citations73
US9368232B2Jun 14, 2016
Magnetic automatic test equipment (ATE) memory tester device and method employing temperature control
QUALCOMM INC0 citations52
US9082962B2Jul 14, 2015
Magnetic Tunnel Junction (MTJ) on planarized electrode
QUALCOMM INC0 citations52
US9159455B2Oct 13, 2015
Data retention error detection system
QUALCOMM INC0 citations51
US10534047B2Jan 14, 2020
Tunnel magneto-resistive (TMR) sensors employing TMR devices with different magnetic field sensitivities for increased detection sensitivity
QUALCOMM INC0 citations38