Inventor
YOUNG ALBERT M
US45 patents
⚠️ This page may combine multiple inventors who share the name “YOUNG ALBERT M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
29 patentsUS7913202B2Mar 22, 2011
Wafer level I/O test, repair and/or customization enabled by I/O layer
IBM22 citations92
US7521950B2Apr 21, 2009
Wafer level I/O test and repair enabled by I/O layer
IBM21 citations92
US7683478B2Mar 23, 2010
Hermetic seal and reliable bonding structures for 3D applications
IBM9 citations84
US12268031B2Apr 1, 2025
Backside power rails and power distribution network for density scaling
IBM2 citations74
US7545667B2Jun 9, 2009
Programmable via structure for three dimensional integration technology
IBM6 citations74
US12543554B2Feb 3, 2026
Stacked field effect transistor contacts
IBM0 citations63
US12490465B2Dec 2, 2025
Stacked field effect transistor
IBM0 citations63
US12484265B2Nov 25, 2025
Subtractive source drain contact for stacked devices
IBM0 citations63
US12477819B2Nov 18, 2025
Stacked FET with extremely small cell height
IBM0 citations63
US12446320B2Oct 14, 2025
Bottom contact with self-aligned spacer for stacked semiconductor devices
IBM0 citations63
US12424591B2Sep 23, 2025
Method and structure of forming independent contact for staggered CFET
IBM0 citations63
US12322652B2Jun 3, 2025
Local interconnect for cross coupling
IBM0 citations63
US12310072B2May 20, 2025
Middle of line structure with stacked devices
IBM0 citations63
US12278184B2Apr 15, 2025
Vertically-stacked field effect transistor cell
IBM0 citations63
US12136655B2Nov 5, 2024
Backside electrical contacts to buried power rails
IBM0 citations63
US11915966B2Feb 27, 2024
Backside power rail integration
IBM0 citations63
US7786596B2Aug 31, 2010
Hermetic seal and reliable bonding structures for 3D applications
IBM3 citations63
US7732798B2Jun 8, 2010
Programmable via structure for three dimensional integration technology
IBM4 citations63
US7652278B2Jan 26, 2010
Programmable via structure and method of fabricating same
IBM3 citations63
US7528056B2May 5, 2009
Low-cost strained SOI substrate for high-performance CMOS technology
IBM5 citations63
US11956939B2Apr 9, 2024
Static random access memory using vertical transport field effect transistors
IBM0 citations62
US11678475B2Jun 13, 2023
Static random access memory using vertical transport field effect transistors
IBM0 citations62
US7999377B2Aug 16, 2011
Method and structure for optimizing yield of 3-D chip manufacture
IBM2 citations60
US7737003B2Jun 15, 2010
Method and structure for optimizing yield of 3-D chip manufacture
IBM4 citations60
US9887623B2Feb 6, 2018
Efficient voltage conversion
IBM0 citations52
US9755506B2Sep 5, 2017
Efficient voltage conversion
IBM0 citations52
US7888164B2Feb 15, 2011
Programmable via structure and method of fabricating same
IBM0 citations52
US12268026B2Apr 1, 2025
High aspect ratio contact structure with multiple metal stacks
IBM0 citations51
US12142656B2Nov 12, 2024
Staggered stacked semiconductor devices
IBM0 citations47
AEROSPACE CORP
5 patentsUS6396298B1May 28, 2002
Active feedback pulsed measurement method
AEROSPACE CORP132 citations97
US6177836B1Jan 23, 2001
Feed forward linearized traveling wave tube
AEROSPACE CORP64 citations91
US7129783B2Oct 31, 2006
Hybrid active combiner and circulator
AEROSPACE CORP17 citations82
US7256649B2Aug 14, 2007
Multiple signal intermodulation reduction system
AEROSPACE CORP19 citations79
US7847597B1Dec 7, 2010
Precision frequency change detector
AEROSPACE CORP10 citations78
FAROOQ MUKTA G
5 patentsUS8492869B2Jul 23, 2013
3D integrated circuit device having lower-cost active circuitry layers stacked before higher-cost active circuitry layer
FAROOQ MUKTA G5 citations84
US8298914B2Oct 30, 2012
3D integrated circuit device fabrication using interface wafer as permanent carrier
FAROOQ MUKTA G7 citations84
US8664081B2Mar 4, 2014
Method for fabricating 3D integrated circuit device using interface wafer as permanent carrier
FAROOQ MUKTA G2 citations63
US8399336B2Mar 19, 2013
Method for fabricating a 3D integrated circuit device having lower-cost active circuitry layers stacked before higher-cost active circuitry layer
FAROOQ MUKTA G2 citations63
US8962448B2Feb 24, 2015
Computer readable medium encoded with a program for fabricating 3D integrated circuit device using interface wafer as permanent carrier
FAROOQ MUKTA G0 citations52