P

Inventor

MEYER RYAN

US18 patents
⚠️ This page may combine multiple inventors who share the name “MEYER RYAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

9 patents
US10388665B1Aug 20, 2019

Methods of forming an array of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stack

MICRON TECHNOLOGY INC46 citations96
US10014309B2Jul 3, 2018

Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor

MICRON TECHNOLOGY INC34 citations94
US10263007B2Apr 16, 2019

Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor

MICRON TECHNOLOGY INC11 citations84
US10157933B2Dec 18, 2018

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

MICRON TECHNOLOGY INC2 citations72
US11937429B2Mar 19, 2024

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

MICRON TECHNOLOGY INC0 citations62
US11239252B2Feb 1, 2022

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

MICRON TECHNOLOGY INC0 citations62
US10727242B2Jul 28, 2020

Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor

MICRON TECHNOLOGY INC0 citations52
US10720446B2Jul 21, 2020

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

MICRON TECHNOLOGY INC0 citations51
US10586807B2Mar 10, 2020

Arrays of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stacks

MICRON TECHNOLOGY INC0 citations51

MICROSOFT TECHNOLOGY LICENSING LLC

2 patents

KOLDER INC

2 patents

US GOV SEC ARMY

1 patent

HARSCO CORP

1 patent

Harsco Technologies LLC

1 patent

HONEYWELL INT INC

1 patent

AMAZON TECH INC

1 patent