Inventor

TSAI CHUN HSIUNG

TW239 patents

⚠️ This page may combine multiple inventors who share the name “TSAI CHUN HSIUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TSAI CHUN HSIUNG

TAIWAN SEMICONDUCTOR MFG CO LTD

Method for fabricating fin field effect transistor and semiconductor device

Method for forming source/drain contacts

Contact resistance reduction technique

Method of manufacturing a semiconductor device and a semiconductor device

Mechanism for FinFET well doping

Fin field effect transistor (FinFET) device structure with doped region in source/drain structure and method for forming the same

Method for forming source/drain contacts

FinFET fabrication methods

Formation of dislocations in source and drain regions of FinFET devices

Formation of dislocations in source and drain regions of FinFET devices

FinFET device and method of forming the same

Semiconductor device including Fin structures and manufacturing method thereof

Gate spacers and methods of forming

Systems and methods for annealing semiconductor structures

Mechanism for FinFET well doping

Semiconductor substructure having elevated strain material-sidewall interface and method of making the same

FinFET structure and method for manufacturing thereof

Source/drain junction formation

Asymmetric cyclic deposition and etch process for epitaxial formation mechanisms of source and drain regions

Method for semiconductor device fabrication

FinFET fin bending reduction

TAIWAN SEMICONDUCTOR MFG

Formation of dislocations in source and drain regions of FinFET devices

Method for FinFET device

Method for forming epitaxial feature

Mechanisms for doping lightly-doped-drain (LDD) regions of finFET devices

Self-aligned dual-metal silicide and germanide formation

Asymmetric cyclic depositon and etch process for epitaxial formation mechanisms of source and drain regions

Mechanism of forming a trench structure

Contact structure of semiconductor device

Defect reduction for formation of epitaxial layer in source and drain regions

Mechanisms for forming ultra shallow junction

Mechanisms for forming ultra shallow junction

Asymmetric rapid thermal annealing to reduce pattern effect

Epitaxial growth of doped film for source and drain regions

Epitaxial growth of doped film for source and drain regions

Techniques for FinFET doping

FinFET fin bending reduction

Epitaxial formation mechanisms of source and drain regions

Asymmetric cyclic desposition etch epitaxy

TSAI CHUN HSIUNG

Methods for doping fin field-effect transistors

Methods of anneal after deposition of gate layers

Epitaxial formation of source and drain regions

Pinch-off control of gate edge dislocation

Semiconductor device with a dislocation structure and method of forming the same

Techniques for FinFET doping

FinFET LDD and source drain implant technique

Mechanisms for forming stressor regions in a semiconductor device

HUANG YU-LIEN

High surface dopant concentration semiconductor device and method of fabricating

Doped oxide for shallow trench isolation (STI)

WU CHII-MING

Mechanisms for forming ultra shallow junction