Inventor
OUYANG QIGING
US2 patents
Patents
2 patentsUS7138697B2Nov 21, 2006
Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector
IBM54 citations94
US7691716B2Apr 6, 2010
Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operation
IBM10 citations82