P

Inventor

PARK BYUNG-LYUL

KR104 patents
⚠️ This page may combine multiple inventors who share the name “PARK BYUNG-LYUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

29 patents
US9461007B2Oct 4, 2016

Wafer-to-wafer bonding structure

SAMSUNG ELECTRONICS CO LTD239 citations99
US8354308B2Jan 15, 2013

Conductive layer buried-type substrate, method of forming the conductive layer buried-type substrate, and method of fabricating semiconductor device using the conductive layer buried-type substrate

SAMSUNG ELECTRONICS CO LTD230 citations98
US6087257AJul 11, 2000

Methods of fabricating a selectively deposited tungsten nitride layer and metal wiring using a tungsten nitride layer

SAMSUNG ELECTRONICS CO LTD99 citations97
US5723384AMar 3, 1998

Method for manufacturing a capacitor in a semiconductor device using selective tungsten nitride thin film

SAMSUNG ELECTRONICS CO LTD91 citations95
US9865581B2Jan 9, 2018

Method of fabricating multi-substrate semiconductor devices

SAMSUNG ELECTRONICS CO LTD25 citations93
US9520361B2Dec 13, 2016

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD28 citations93
US8957526B2Feb 17, 2015

Semiconductor chips having through silicon vias and related fabrication methods and semiconductor packages

SAMSUNG ELECTRONICS CO LTD19 citations92
US5970309AOct 19, 1999

Method of manufacturing a capacitor and a capacitor electrode in semiconductor device

SAMSUNG ELECTRONICS CO LTD36 citations92
US10325882B2Jun 18, 2019

Method of manufacturing semiconductor package

SAMSUNG ELECTRONICS CO LTD38 citations91
US6596581B2Jul 22, 2003

Method for manufacturing a semiconductor device having a metal-insulator-metal capacitor and a damascene wiring layer structure

SAMSUNG ELECTRONICS CO LTD26 citations89
US7737038B2Jun 15, 2010

Method of fabricating semiconductor device including planarizing conductive layer using parameters of pattern density and depth of trenches

SAMSUNG ELECTRONICS CO LTD48 citations88
US10165349B2Dec 25, 2018

Audio output device and electronic device connected therewith

SAMSUNG ELECTRONICS CO LTD9 citations84
US9935037B2Apr 3, 2018

Multi-stacked device having TSV structure

SAMSUNG ELECTRONICS CO LTD13 citations84
US9824973B2Nov 21, 2017

Integrated circuit devices having through-silicon via structures and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US9337125B2May 10, 2016

Integrated circuit devices including a via structure and methods of fabricating integrated circuit devices including a via structure

SAMSUNG ELECTRONICS CO LTD10 citations84
US9076849B2Jul 7, 2015

Semiconductor devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations84
US9070748B2Jun 30, 2015

Semiconductor devices having through-vias and methods for fabricating the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US8941216B2Jan 27, 2015

Semiconductor devices having through-vias and methods for fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US9728490B2Aug 8, 2017

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD9 citations83
US9530706B2Dec 27, 2016

Semiconductor devices having hybrid stacking structures and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD13 citations83
US8927426B2Jan 6, 2015

Semiconductor devices having through-vias and methods for fabricating the same

SAMSUNG ELECTRONICS CO LTD10 citations83
US8836142B2Sep 16, 2014

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD7 citations83
US6399457B2Jun 4, 2002

Semiconductor device having capacitor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations74
US11710715B2Jul 25, 2023

Semiconductor package

SAMSUNG ELECTRONICS CO LTD2 citations73
US10325897B2Jun 18, 2019

Method for fabricating substrate structure and substrate structure fabricated by using the method

SAMSUNG ELECTRONICS CO LTD4 citations73
US9773660B2Sep 26, 2017

Wafer processing methods

SAMSUNG ELECTRONICS CO LTD3 citations73
US9543250B2Jan 10, 2017

Semiconductor devices including through-silicon via

SAMSUNG ELECTRONICS CO LTD3 citations73
US9252141B2Feb 2, 2016

Semiconductor integrated circuit, method for fabricating the same, and semiconductor package

SAMSUNG ELECTRONICS CO LTD4 citations73
US9236349B2Jan 12, 2016

Semiconductor device including through via structures and redistribution structures

SAMSUNG ELECTRONICS CO LTD6 citations73

LEE HO-JIN

4 patents

PARK JAE-HWA

3 patents

PARK BYUNG-LYUL

3 patents

KANG PIL-KYU

2 patents

JUNG DEOK-YOUNG

2 patents

PARK JIN-HO

2 patents

MOON KWANG-JIN

1 patent

KIM SU-KYOUNG

1 patent

HAN KYU-HEE

1 patent

LEE DOSUN

1 patent

KIM TAEYEONG

1 patent

Showing the top 50 of 104 patents by PatentIndex Score.