Inventor

ISHIZAKA TADAHIRO

US68 patents

⚠️ This page may combine multiple inventors who share the name “ISHIZAKA TADAHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ISHIZAKA TADAHIRO

TOKYO ELECTRON LTD

Method of forming a metal carbide or metal carbonitride film having improved adhesion

Plasma enhanced atomic layer deposition system having reduced contamination

Method of integrating PEALD Ta-containing films into Cu metallization

Plasma enhanced atomic layer deposition system and method

Method of plasma enhanced atomic layer deposition of TaC and TaCN films having good adhesion to copper

Method of preparing a film layer-by-layer using plasma enhanced atomic layer deposition

Plasma enhanced atomic layer deposition system

Substrate processing method and fabrication process of a semiconductor device

Heat-treating apparatus and heat-treating method

Method for forming TiON film

Method of forming a diffusion barrier and adhesion layer for an interconnect structure

Gas switching mechanism for plasma processing apparatus

Method for forming cobalt nitride cap layers

Film precursor tray for use in a film precursor evaporation system and method of using

Diffusion barrier for integrated circuits formed from a layer of reactive metal and method of fabrication

Embedding method and processing system

Method for manufacturing semiconductor device

Film forming method, film forming apparatus and recording medium

Method for forming copper wiring

Integration of ALD barrier layer and CVD Ru liner for void-free Cu filling

Method and apparatus for embedding ruthenium in recess formed on substrate surface

Ruthenium film forming method and substrate processing system

Ruthenium film forming method and substrate processing system

Copper wiring forming method, film forming system, and storage medium

Copper wiring structure forming method

Semiconductor device containing an aluminum tantalum carbonitride barrier film and method of forming

Method for manufacturing a semiconductor device with metal-containing cap layers

Method for depositing a barrier layer on a low dielectric constant material

Substrate processing method and fabrication process of a semiconductor device

Method of light enhanced atomic layer deposition

Semiconductor contact structure containing an oxidation-resistant diffusion barrier and method of forming

Deposition method for forming a film including metal, nitrogen and carbon

Film-forming method and film-forming system

Hard mask, substrate processing method, and substrate processing apparatus

Surface processing method and processing system

Method for forming a ruthenium metal cap layer

Method for forming cobalt tungsten cap layers

TiN-based film and TiN-based film forming method

Substrate processing method and substrate processing apparatus

Method of manufacturing ruthenium wiring

Method of forming copper wiring

Method for forming Cu wiring

Integrated substrate processing in a vacuum processing tool

Method for forming RuSi film and substrate processing system

ISHIZAKA TADAHIRO

Post deposition plasma cleaning system and method

Diffusion barrier and adhesion layer for an interconnect structure

Selective deposition of metal-containing cap layers for semiconductor devices

Methods of forming copper wiring and copper film, and film forming system

Method of forming copper wiring and method and system for forming copper film

Radiation-assisted selective deposition of metal-containing cap layers