Inventor

CHATTERJEE AMITAVA

US104 patents

⚠️ This page may combine multiple inventors who share the name “CHATTERJEE AMITAVA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHATTERJEE AMITAVA

TEXAS INSTRUMENTS INC

Lateral SCR structure for ESD protection in trench isolated technologies

Low voltage triggering semiconductor controlled rectifiers

Integrated circuit insulator and method

Semiconductor devices with pocket implant and counter doping

Method of making a silicon controlled rectifier device for electrostatic discharge protection

Silicon controlled rectifier structure for electrostatic discharge protection

Efficient ESD input protection scheme

Gate coupled SCR for ESD protection circuits

Disposable gate/replacement gate MOSFETs for sub-0.1 micron gate length and ultra-shallow junctions

Reducing non-uniformity in a refill layer thickness for a semiconductor device

Programmable interconnect or cell using silicided MOS transistors

Transistors having selectively doped channel regions

Vertical bipolar transistor formed using CMOS processes

Buried channel PMOS transistor in dual gate CMOS with reduced masking steps

Integrated circuit asymmetric transistors

Use of a thin nitride spacer in a split gate embedded analog process

Semiconductor devices with pocket implant and counter doping

Method of forming a transistor having an improved sidewall gate structure

Fabrication of abrupt ultra-shallow junctions using angled PAI and fluorine implant

Compensated-well electrostatic discharge protection structure

Method to partially or completely suppress pocket implant in selective circuit elements with no additional mask in a cmos flow where separate masking steps are used for the drain extension implants for the low voltage and high voltage transistors

In-situ liner for isolation trench side walls and method

Integrated bipolar junction transistor for mixed signal circuits

Air-bridge integration scheme for reducing interconnect delay

Semiconductor ESD protection circuit

Hydrogen silsesquioxane thin films for low capacitance structures in integrated circuits

Modeling process for integrated circuit film resistors

Disposable gate/replacement gate MOSFETS for sub-0.1 micron gate length and ultra-shallow junctions

Bistable SCR-like switch for ESD protection of silicon-on-insulator integrated circuits

Programmable interconnect or cell using silicided MOS transistors

Semiconductor device having optimized shallow junction geometries and method for fabrication thereof

CMP-free disposable gate process

Drain extended CMOS with counter-doped drain extension

ESD protection circuit with isolated SCR for negative voltage operation

Method to design for or modulate the CMOS transistor threshold voltage using shallow trench isolation (STI)

Compensated-well electrostatic discharge protection devices

High performance PNP bipolar device fully compatible with CMOS process

Method for manufacturing a semiconductor device using a sidewall spacer etchback

Multi-layer reducible sidewall process

Method to engineer the inverse narrow width effect (INWE) in CMOS technology using shallow trench isolation (STI)

Method for manufacturing improved sidewall structures for use in semiconductor devices

Forming lateral bipolar junction transistor in CMOS flow

Fabricating dual voltage CMOSFETs using additional implant into core at high voltage mask

Asymmetrical devices for short gate length performance with disposable sidewall

Method of making multiple threshold voltage integrated of circuit transistors

Diffusion resistor with reduced voltage coefficient of resistance and increased breakdown voltage using CMOS wells

SADRA KAYVAN

Application of different isolation schemes for logic and embedded memory

TEXAS INSTURMENTS INC

Silicon controlled rectifier structure for electrostatic discharge protection

STEINMANN PHILIPP

Drain extended CMOS with counter-doped drain extension

LIU KAIPING

Analog floating-gate capacitor with improved data retention in a silicided integrated circuit