P

Inventor

NAKAMURA TAKAO

JP179 patents
⚠️ This page may combine multiple inventors who share the name “NAKAMURA TAKAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUMITOMO ELECTRIC INDUSTRIES

16 patents
US6876003B1Apr 5, 2005

Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device

SUMITOMO ELECTRIC INDUSTRIES67 citations98
US7732236B2Jun 8, 2010

III nitride semiconductor crystal and manufacturing method thereof, III nitride semiconductor device manufacturing method thereof, and light emitting device

SUMITOMO ELECTRIC INDUSTRIES20 citations93
US6528395B2Mar 4, 2003

Method of fabricating compound semiconductor device and apparatus for fabricating compound semiconductor device

SUMITOMO ELECTRIC INDUSTRIES20 citations93
US5674813AOct 7, 1997

Process for preparing layered structure including oxide super conductor thin film

SUMITOMO ELECTRIC INDUSTRIES37 citations93
US5430012AJul 4, 1995

Superconducting multilayer interconnection formed of a-axis and c-axis oriented oxide superconductor materials

SUMITOMO ELECTRIC INDUSTRIES20 citations93
US5422490AJun 6, 1995

Focused ion beam implantation apparatus

SUMITOMO ELECTRIC INDUSTRIES22 citations93
US5236896AAug 17, 1993

Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material

SUMITOMO ELECTRIC INDUSTRIES30 citations93
US7933303B2Apr 26, 2011

Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device

SUMITOMO ELECTRIC INDUSTRIES30 citations92
US7190004B2Mar 13, 2007

Light emitting device

SUMITOMO ELECTRIC INDUSTRIES32 citations92
US6724018B2Apr 20, 2004

Zn1-xMgxSySe1-y pin-photodiode and Zn1-xMgxSySe1-y avalanche-photodiode

SUMITOMO ELECTRIC INDUSTRIES25 citations91
US5556472ASep 17, 1996

Film deposition apparatus

SUMITOMO ELECTRIC INDUSTRIES62 citations91
US7851821B2Dec 14, 2010

Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor device

SUMITOMO ELECTRIC INDUSTRIES9 citations84
US7294867B2Nov 13, 2007

Semiconductor light generating device

SUMITOMO ELECTRIC INDUSTRIES11 citations84
US5446016AAug 29, 1995

Method for forming a patterned oxide superconductor thin film

SUMITOMO ELECTRIC INDUSTRIES19 citations82
US5407903AApr 18, 1995

Superconducting device having a reduced thickness of oxide superconducting layer

SUMITOMO ELECTRIC INDUSTRIES16 citations82
US5322526AJun 21, 1994

Method for manufacturing a superconducting device having an extremely thin superconducting channel formed of oxide superconductor material

SUMITOMO ELECTRIC INDUSTRIES16 citations82

HITACHI LTD

8 patents

NIPPON TELEGRAPH & TELEPHONE

6 patents

CANON KK

4 patents

YOSHIZUMI YUSUKE

4 patents

OKI ELECTRIC IND CO LTD

2 patents

CHISSO CORP

2 patents

SHARP KK

2 patents

YAMAMOTO SUSUMU

2 patents

MARUZEN PETROCHEM CO LTD

1 patent

NGK INSULATORS LTD

1 patent

ALTIA HASHIMOTO CO LTD

1 patent

JAPAN DISPLAY INC

1 patent

Showing the top 50 of 179 patents by PatentIndex Score.