Inventor
ENYA YOHEI
JP66 patents
⚠️ This page may combine multiple inventors who share the name “ENYA YOHEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SUMITOMO ELECTRIC INDUSTRIES
21 patentsUS10892596B2Jan 12, 2021
Optical module
SUMITOMO ELECTRIC INDUSTRIES78 citations98
US7933303B2Apr 26, 2011
Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
SUMITOMO ELECTRIC INDUSTRIES30 citations92
US7873088B2Jan 18, 2011
Group III nitride semiconductor element and epitaxial wafer
SUMITOMO ELECTRIC INDUSTRIES11 citations84
US7851821B2Dec 14, 2010
Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor device
SUMITOMO ELECTRIC INDUSTRIES9 citations84
US8053806B2Nov 8, 2011
Group III nitride semiconductor device and epitaxial substrate
SUMITOMO ELECTRIC INDUSTRIES4 citations74
US7858963B2Dec 28, 2010
Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device
SUMITOMO ELECTRIC INDUSTRIES6 citations74
US9977201B2May 22, 2018
Optical module that suppresses stray light
SUMITOMO ELECTRIC INDUSTRIES2 citations72
US9806494B2Oct 31, 2017
Optical module and method for manufacturing the optical module
SUMITOMO ELECTRIC INDUSTRIES2 citations72
US10601200B2Mar 24, 2020
Optical module
SUMITOMO ELECTRIC INDUSTRIES4 citations71
US12184034B2Dec 31, 2024
Laser module
SUMITOMO ELECTRIC INDUSTRIES0 citations63
US11616337B2Mar 28, 2023
Optical module
SUMITOMO ELECTRIC INDUSTRIES0 citations63
US11245245B2Feb 8, 2022
Optical module
SUMITOMO ELECTRIC INDUSTRIES0 citations63
US8357946B2Jan 22, 2013
Nitride semiconductor light emitting device, epitaxial substrate, and method for fabricating nitride semiconductor light emitting device
SUMITOMO ELECTRIC INDUSTRIES2 citations63
US8048702B2Nov 1, 2011
Method of fabricating nitride-based semiconductor optical device
SUMITOMO ELECTRIC INDUSTRIES5 citations63
US7851243B1Dec 14, 2010
Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device
SUMITOMO ELECTRIC INDUSTRIES2 citations63
US10333270B2Jun 25, 2019
Optical module and method for manufacturing the optical module
SUMITOMO ELECTRIC INDUSTRIES1 citations61
US12222493B2Feb 11, 2025
Optical module
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US11609423B2Mar 21, 2023
Mirror driving mechanism and optical module
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US10892595B2Jan 12, 2021
Optical module
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US9379523B2Jun 28, 2016
Group III nitride semiconductor device, p-type contact structure, and method for fabricating group III nitride semiconductor device
SUMITOMO ELECTRIC INDUSTRIES1 citations52
US7955881B2Jun 7, 2011
Method of fabricating quantum well structure
SUMITOMO ELECTRIC INDUSTRIES1 citations52
YOSHIZUMI YUSUKE
10 patentsUS8546163B2Oct 1, 2013
Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
YOSHIZUMI YUSUKE6 citations84
US8306082B2Nov 6, 2012
Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device
YOSHIZUMI YUSUKE12 citations84
US8304793B2Nov 6, 2012
III-nitride semiconductor optical device and epitaxial substrate
YOSHIZUMI YUSUKE13 citations84
US8227277B2Jul 24, 2012
Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device
YOSHIZUMI YUSUKE15 citations84
US8741674B2Jun 3, 2014
Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
YOSHIZUMI YUSUKE6 citations73
US8488642B2Jul 16, 2013
Gallium nitride based semiconductor light-emitting device and method for fabricating the same, gallium nitride based light-emitting diode, epitaxial wafer, and method for fabricating gallium nitride light-emitting diode
YOSHIZUMI YUSUKE3 citations63
US8507305B2Aug 13, 2013
Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrate
YOSHIZUMI YUSUKE4 citations62
US8107507B2Jan 31, 2012
Group III nitride semiconductor element and epitaxial wafer
YOSHIZUMI YUSUKE2 citations62
US8693515B2Apr 8, 2014
Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
YOSHIZUMI YUSUKE0 citations52
US8391327B2Mar 5, 2013
Group III nitride semiconductor element and epitaxial wafer
YOSHIZUMI YUSUKE0 citations52
KYONO TAKASHI
6 patentsUS8718110B2May 6, 2014
Nitride semiconductor laser and epitaxial substrate
KYONO TAKASHI6 citations72
US8803274B2Aug 12, 2014
Nitride-based semiconductor light-emitting element
KYONO TAKASHI3 citations62
US8513684B2Aug 20, 2013
Nitride semiconductor light emitting device
KYONO TAKASHI3 citations62
US8207556B2Jun 26, 2012
Group III nitride semiconductor device and epitaxial substrate
KYONO TAKASHI2 citations62
US8953656B2Feb 10, 2015
III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser device
KYONO TAKASHI1 citations52
US8304269B2Nov 6, 2012
Method of fabricating group III nitride semiconductor device
KYONO TAKASHI0 citations52
ENYA YOHEI
5 patentsUS8483251B2Jul 9, 2013
Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diode
ENYA YOHEI2 citations62
US8476615B2Jul 2, 2013
GaN-based semiconductor light emitting device and the method for making the same
ENYA YOHEI3 citations62
US8207544B2Jun 26, 2012
Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device
ENYA YOHEI2 citations62
US8487327B2Jul 16, 2013
Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device
ENYA YOHEI0 citations51
US8809868B2Aug 19, 2014
Group-III nitride semiconductor device, method for fabricating Group-III nitride semiconductor device, and epitaxial substrate
ENYA YOHEI1 citations50
UENO MASAKI
3 patentsUS8927962B2Jan 6, 2015
Group III nitride semiconductor optical device
UENO MASAKI4 citations73
US8148716B2Apr 3, 2012
Group III nitride semiconductor optical device, epitaxial substrate, and method of making group III nitride semiconductor light-emitting device
UENO MASAKI1 citations52
US8067257B2Nov 29, 2011
Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device
UENO MASAKI1 citations52
SONY CORP
1 patentFUJII KEI
1 patentAKITA KATSUSHI
1 patentSUMITOMO TAKAMICHI
1 patentSUMITOMO ELECTRIC INSDUSTRIES LTD
1 patentShowing the top 50 of 66 patents by PatentIndex Score.