Inventor · disambiguated record
Wan-Goo Hwang
Also filed as: HWANG WAN-GOO
7 granted patents·8 pending applications·87 citations·filing 2002–2009
84Inventor score
Top patents by PatentIndex Score
15 records- 0193US7578944B2Apparatus for generating gas plasma, gas composition for generating plasma and method for manufacturing semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 25, 2009·23 cites·11 claims
- 0286US7193369B2Method for generating gas plasmaSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 20, 2007·30 cites·25 claims
- 0376US7497963B2Etching methodSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 3, 2009·7 cites·11 claims
- 0476US6858854B2Method and apparatus for measuring inclination angle of ion beamSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 22, 2005·22 cites·36 claims
- 0567US7786010B2Method for forming a thin layer on semiconductor substratesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 31, 2010·5 cites·16 claims
- 0651US8083892B2Apparatus for generating gas plasma, gas composition for generating plasma and method for manufacturing semiconductor device using the sameMIN YOUNG-MIN·Filed 2009·Granted Dec 27, 2011·0 cites·13 claims
- 0745US2006110534A1Methods and apparatus for forming a titanium nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 0844US2006169201A1Apparatus for supplying gas and apparatus for forming a layer having the sameHWANG WAN-GOO·Filed 2006·Application pending·0 cites
- 0943US2006175304A1Method of forming layers on substrates using microwave energy and apparatus for performing the sameHWANG WAN-GOO·Filed 2006·Application pending·0 cites
- 1042US2008044585A1Methods and apparatus for evaporating liquid precursors and methods of forming a dielectric layer using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1140US2007181062A1Semiconductor device manufacturing apparatus including temperature measuring unitKIM IL-KYOUNG·Filed 2007·Application pending·0 cites
- 1239US2006160337A1Method of manufacturing a hemisperical grain silicon layer and method of manufacturing a semiconductor device using the sameKIM YOUNG-JIN·Filed 2005·Application pending·0 cites
- 1337US2006110533A1Methods and apparatus for forming a titanium nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 1436US2007051387A1Method of cleaning plasma applicator in situ and plasma applicator employing the sameHWANG WAN-GOO·Filed 2006·Application pending·0 cites
- 1532US6833621B2Metal gasket for a semiconductor fabrication chamberSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 21, 2004·0 cites·7 claims
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