Inventor

WANG WEN-DE

TW86 patents

⚠️ This page may combine multiple inventors who share the name “WANG WEN-DE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WANG WEN-DE

TAIWAN SEMICONDUCTOR MFG CO LTD

Back side illuminated image sensor with reduced sidewall-induced leakage

3DIC seal ring structure and methods of forming same

Back side illuminated image sensor having isolated bonding pads

Semiconductor device structure and method for manufacturing the same

Back side illuminated image sensor with reduced sidewall-induced leakage

Seal ring structures and methods of forming same

3DIC seal ring structure and methods of forming same

Image sensor device and method of forming same

Backside structure and methods for BSI image sensors

Image sensor device and method of forming same

Backside structure and methods for BSI image sensors

Back side illuminated image sensor with reduced sidewall-induced leakage

Implant isolated devices and method for forming the same

Vertically integrated image sensor chips and methods for forming the same

Vertically integrated image sensor chips and methods for forming the same

Pad structure exposed in an opening through multiple dielectric layers in BSI image sensor chips

3DIC seal ring structure and methods of forming same

TAIWAN SEMICONDUCTOR MFG

Enhanced color image sensor device and method of making the same

Vertically integrated image sensor chips and methods for forming the same

Seal ring structure with a metal pad

Light shield for CMOS imager

Multiple seal ring structure

Backside structure and method for BSI image sensors

Backside structure and methods for BSI image sensors

Light shield for CMOS imager

Method of implantation

Front side implanted guard ring structure for backside

Pad structures formed in double openings in dielectric layers

Semiconductor device having a bonding pad and shield structure and method of manufacturing the same

Backside illuminated image sensor having capacitor on pixel region

Optical transmission improvement on multi-dielectric structure in advance CMOS imager

CMOS image sensor

TSAI SHUANG-JI

Back side illuminated image sensor having isolated bonding pads

Backside illumination sensor having a bonding pad structure and method of making the same

Image sensor structure to reduce cross-talk and improve quantum efficiency

Semiconductor device having a bonding pad and shield structure of different thickness

WANG WEN-DE

Pad design for backside illuminated image sensor

Front side implanted guard ring structure for backside illuminated image sensor

Image sensor and method of fabricating same

CHUANG CHUN-CHIEH

Backside structure and methods for BSI image sensors

Ridge structure for back side illuminated image sensor

Backside illuminated image sensor having capacitor on pixel region

LIN JENG-SHYAN

Seal ring structure with metal pad

Pad structure including glue layer and non-low-k dielectric layer in BSI image sensor chips

Vertically integrated image sensor chips and methods for forming the same

LIU HAN-CHI

Backside illuminated image sensor device with refractive index dependent layer thicknesses and method of forming the same

LIU JEN-CHENG

Photodiode with multi-epi films for image sensor

YAUNG DUN-NIAN

Multiple seal ring structure

HO CHENG-YING

CMOS image sensor and method for forming the same

CHOU KENG-YU

Back side illuminated image sensor with improved stress immunity