Inventor
HUO KER-HSIAO
TW42 patents
⚠️ This page may combine multiple inventors who share the name “HUO KER-HSIAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
28 patentsUS9673323B2Jun 6, 2017
Embedded JFETs for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10535730B2Jan 14, 2020
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US9831340B2Nov 28, 2017
Semiconductor structure and associated fabricating method
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US11410991B2Aug 9, 2022
Series resistor over drain region in high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10923467B2Feb 16, 2021
Series resistor over drain region in high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10867990B2Dec 15, 2020
Series resistor over drain region in high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9853149B1Dec 26, 2017
Floating grid and crown-shaping poly for improving ILD CMP dishing
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11145713B2Oct 12, 2021
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US9035379B2May 19, 2015
High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12211935B2Jan 28, 2025
Semiconductor structure and associated fabricating method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11508845B2Nov 22, 2022
Semiconductor structure and associated fabricating method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11069805B2Jul 20, 2021
Embedded JFETs for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10930776B2Feb 23, 2021
High voltage LDMOS transistor and methods for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11004844B2May 11, 2021
Recessed STI as the gate dielectric of HV device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10916542B2Feb 9, 2021
Recessed STI as the gate dielectric of HV device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10790387B2Sep 29, 2020
High voltage LDMOS transistor and methods for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510882B2Dec 17, 2019
Embedded JFETs for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10483259B2Nov 19, 2019
Series resistor over drain region in high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10121890B2Nov 6, 2018
High voltage transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9941268B2Apr 10, 2018
Series resistor over drain region in high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9911845B2Mar 6, 2018
High voltage LDMOS transistor and methods for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9793385B2Oct 17, 2017
Insulated gate bipolar transistor structure having low substrate leakage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9660108B2May 23, 2017
Bootstrap MOS for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9190476B2Nov 17, 2015
High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11862675B2Jan 2, 2024
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10847652B2Nov 24, 2020
Semiconductor structure and associated fabricating method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10325964B2Jun 18, 2019
OLED merged spacer device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations39
US10164037B2Dec 25, 2018
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations39
TAIWAN SEMICONDUCTOR MFG
7 patentsUS9190535B2Nov 17, 2015
Bootstrap MOS for high voltage applications
TAIWAN SEMICONDUCTOR MFG12 citations84
US8969913B2Mar 3, 2015
Insulated gate bipolar transistor structure having low substrate leakage
TAIWAN SEMICONDUCTOR MFG5 citations84
US9257533B2Feb 9, 2016
Method of making an insulated gate bipolar transistor structure
TAIWAN SEMICONDUCTOR MFG2 citations63
US9391195B2Jul 12, 2016
High side gate driver device
TAIWAN SEMICONDUCTOR MFG0 citations52
US9379188B2Jun 28, 2016
Insulated gate bipolar transistor structure having low substrate leakage
TAIWAN SEMICONDUCTOR MFG0 citations52
US9257979B2Feb 9, 2016
Embedded JFETs for high voltage applications
TAIWAN SEMICONDUCTOR MFG0 citations52
US9214547B2Dec 15, 2015
Insulated gate bipolar transistor structure having low substrate leakage
TAIWAN SEMICONDUCTOR MFG0 citations52