Inventor

HWANG THOMAS T

US3 patents

Patents

3 patents

US6893979B2May 17, 2005

Method for improved plasma nitridation of ultra thin gate dielectrics

IBM21 citations91

US6635517B2Oct 21, 2003

Use of disposable spacer to introduce gettering in SOI layer

IBM13 citations83

US7109559B2Sep 19, 2006

Nitrided ultra thin gate dielectrics

IBM6 citations72