Inventor
UTSUNO MITSUYA
JP7 patents
Patents
7 patentsUS10755922B2Aug 25, 2020
Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
ASM IP HOLDING BV8 citations83
US10811256B2Oct 20, 2020
Method for etching a carbon-containing feature
ASM IP HOLDING BV3 citations72
US12125700B2Oct 22, 2024
Method of forming high aspect ratio features
ASM IP HOLDING BV2 citations71
US11646197B2May 9, 2023
Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
ASM IP HOLDING BV1 citations61
US11626316B2Apr 11, 2023
Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
ASM IP HOLDING BV1 citations61
US12129548B2Oct 29, 2024
Method of forming structures using a neutral beam
ASM IP HOLDING BV0 citations60
US11643724B2May 9, 2023
Method of forming structures using a neutral beam
ASM IP HOLDING BV1 citations60