Inventor
YOU WEN-CHUN
TW35 patents
⚠️ This page may combine multiple inventors who share the name “YOU WEN-CHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
33 patentsUS9502466B1Nov 22, 2016
Dummy bottom electrode in interconnect to reduce CMP dishing
TAIWAN SEMICONDUCTOR MFG CO LTD81 citations98
US9172036B2Oct 27, 2015
Top electrode blocking layer for RRAM device
TAIWAN SEMICONDUCTOR MFG CO LTD29 citations98
US10008662B2Jun 26, 2018
Perpendicular magnetic tunneling junction (MTJ) for improved magnetoresistive random-access memory (MRAM) process
TAIWAN SEMICONDUCTOR MFG CO LTD53 citations94
US9425392B2Aug 23, 2016
RRAM cell structure with laterally offset BEVA/TEVA
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations93
US10497861B2Dec 3, 2019
Manufacturing techniques and corresponding devices for magnetic tunnel junction devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10043970B2Aug 7, 2018
Determining a characteristic of a monitored layer on an integrated chip
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9985075B2May 29, 2018
Dummy bottom electrode in interconnect to reduce CMP dishing
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9780302B2Oct 3, 2017
Top electrode for device structures in interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9666790B2May 30, 2017
Manufacturing techniques and corresponding devices for magnetic tunnel junction devices
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations84
US9112148B2Aug 18, 2015
RRAM cell structure with laterally offset BEVA/TEVA
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9076522B2Jul 7, 2015
Memory cells breakdown protection
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations84
US11075335B2Jul 27, 2021
Techniques for MRAM MTJ top electrode connection
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US11653572B2May 16, 2023
Manufacturing techniques and corresponding devices for magnetic tunnel junction devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10937957B2Mar 2, 2021
Manufacturing techniques and corresponding devices for magnetic tunnel junction devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10862029B2Dec 8, 2020
Top electrode for device structures in interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10199575B2Feb 5, 2019
RRAM cell structure with laterally offset BEVA/TEVA
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10134807B2Nov 20, 2018
Structure and formation method of integrated circuit structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10878928B2Dec 29, 2020
One-time-programmable (OTP) implementation using magnetic junctions
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11723292B2Aug 8, 2023
RRAM cell structure with laterally offset BEVA/TEVA
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9444045B2Sep 13, 2016
Top electrode for device structures in interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12550619B2Feb 10, 2026
Techniques for MRAM MTJ top electrode connection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12426260B2Sep 23, 2025
Memory device with one-time programmable memory unit and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12426514B2Sep 23, 2025
Techniques for MRAM MTJ top electrode connection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12279437B2Apr 15, 2025
MRAM memory cell layout for minimizing bitcell area
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11800724B2Oct 24, 2023
MRAM memory cell layout for minimizing bitcell area
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11244983B2Feb 8, 2022
MRAM memory cell layout for minimizing bitcell area
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12476207B2Nov 18, 2025
Embedded memory device with reduced plasma-induced damage and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10868250B2Dec 15, 2020
Resistance variable memory structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10700275B2Jun 30, 2020
RRAM cell structure with laterally offset BEVA/TEVA
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510953B2Dec 17, 2019
Top electrode for device structures in interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10388868B2Aug 20, 2019
Resistance variable memory structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10276790B2Apr 30, 2019
Top electrode for device structures in interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10868234B2Dec 15, 2020
Storage device having magnetic tunnel junction cells of different sizes, and method of forming storage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42