Inventor
TORIMI SATOSHI
JP14 patents
⚠️ This page may combine multiple inventors who share the name “TORIMI SATOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOYO TANSO CO
8 patentsUS9644894B2May 9, 2017
Semiconductor device manufacturing apparatus
TOYO TANSO CO6 citations71
US11261539B2Mar 1, 2022
Method for manufacturing reformed sic wafer, epitaxial layer-attached sic wafer, method for manufacturing same, and surface treatment method
TOYO TANSO CO0 citations59
US10388536B2Aug 20, 2019
Etching method for SiC substrate and holding container
TOYO TANSO CO1 citations59
US10014176B2Jul 3, 2018
SiC substrate treatment method
TOYO TANSO CO1 citations50
US9991175B2Jun 5, 2018
Method for estimating depth of latent scratches in SiC substrates
TOYO TANSO CO1 citations50
US9704733B2Jul 11, 2017
Storing container, storing container manufacturing method, semiconductor manufacturing method, and semiconductor manufacturing apparatus
TOYO TANSO CO1 citations50
US9570306B2Feb 14, 2017
Surface treatment method for single crystal SiC substrate, and single crystal SiC substrate
TOYO TANSO CO1 citations50
US10665485B2May 26, 2020
Heat treatment vessel for single-crystal silicon carbide substrate and etching method
TOYO TANSO CO0 citations49
TORIMI SATOSHI
4 patentsUS10358741B2Jul 23, 2019
Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
TORIMI SATOSHI1 citations60
US9725822B2Aug 8, 2017
Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph
TORIMI SATOSHI1 citations49
US9447517B2Sep 20, 2016
Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon
TORIMI SATOSHI0 citations49
US9252206B2Feb 2, 2016
Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
TORIMI SATOSHI0 citations39