Inventor
CHEN YI-MIN
TW42 patents
⚠️ This page may combine multiple inventors who share the name “CHEN YI-MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
30 patentsUS10535730B2Jan 14, 2020
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US9680009B2Jun 13, 2017
High voltage semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11410991B2Aug 9, 2022
Series resistor over drain region in high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10923467B2Feb 16, 2021
Series resistor over drain region in high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10867990B2Dec 15, 2020
Series resistor over drain region in high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11145713B2Oct 12, 2021
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US10665455B2May 26, 2020
Method (and related apparatus) that reduces cycle time for forming large field integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11145709B2Oct 12, 2021
Semiconductor device including a capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations71
US12456677B2Oct 28, 2025
Via landing on first and second barrier layers to reduce cleaning time of conductive structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11942543B2Mar 26, 2024
Semiconductor device structure with high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11776901B2Oct 3, 2023
Via landing on first and second barrier layers to reduce cleaning time of conductive structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11424359B2Aug 23, 2022
Semiconductor device structure with high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10964781B2Mar 30, 2021
High voltage resistor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10930776B2Feb 23, 2021
High voltage LDMOS transistor and methods for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10892360B2Jan 12, 2021
Semiconductor device structure with high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11923425B2Mar 5, 2024
Shielding structure for ultra-high voltage semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11588028B2Feb 21, 2023
Shielding structure for ultra-high voltage semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11081352B2Aug 3, 2021
Method (and related apparatus) that reduces cycle time for forming large field integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10985020B2Apr 20, 2021
Method (and related apparatus) that reduces cycle time for forming large field integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10879236B2Dec 29, 2020
Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12062687B2Aug 13, 2024
Semiconductor device including a capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11728374B2Aug 15, 2023
Semiconductor device including a capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10790387B2Sep 29, 2020
High voltage LDMOS transistor and methods for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10483259B2Nov 19, 2019
Series resistor over drain region in high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9941268B2Apr 10, 2018
Series resistor over drain region in high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9911845B2Mar 6, 2018
High voltage LDMOS transistor and methods for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11862675B2Jan 2, 2024
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10297661B2May 21, 2019
High voltage resistor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10679987B2Jun 9, 2020
Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US12525484B2Jan 13, 2026
Interconnect structure for multi-thickness semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations46
NIKE INC
7 patentsUS11819090B2Nov 21, 2023
Buffing system for footwear
NIKE INC4 citations85
US12285082B2Apr 29, 2025
Buffing system for footwear
NIKE INC0 citations62
US12274330B2Apr 15, 2025
Buffing system for footwear
NIKE INC0 citations62
US12161199B2Dec 10, 2024
Buffing system for footwear
NIKE INC0 citations62
US12029282B2Jul 9, 2024
Buffing system for footwear
NIKE INC0 citations62
US11825916B2Nov 28, 2023
Buffing system for footwear
NIKE INC0 citations62
US11553763B2Jan 17, 2023
Buffing system for footwear
NIKE INC0 citations62