P

Inventor

JANG SHU-UEI

TW32 patents
⚠️ This page may combine multiple inventors who share the name “JANG SHU-UEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

31 patents
US10276449B1Apr 30, 2019

Method for forming fin field effect transistor (FinFET) device structure

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations82
US11855179B2Dec 26, 2023

Semiconductor devices and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11508582B2Nov 22, 2022

Cut metal gate processes

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11437287B2Sep 6, 2022

Transistor gates and methods of forming thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11251284B2Feb 15, 2022

Dummy gate cutting process and resulting gate structures

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10861746B2Dec 8, 2020

Method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10714347B2Jul 14, 2020

Cut metal gate processes

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11996466B2May 28, 2024

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11329140B2May 10, 2022

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11923359B2Mar 5, 2024

Method for forming fin field effect transistor (FinFET) device structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US11063043B2Jul 13, 2021

Method for forming fin field effect transistor (FinFet) device structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US10515952B2Dec 24, 2019

Fin field effect transistor (FinFET) device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations71
US12563803B2Feb 24, 2026

Cut metal gate processes

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12538562B2Jan 27, 2026

Method of manufacturing a semiconductor device including depositing and etching a liner multiple times

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12389664B2Aug 12, 2025

Transistor gates and methods of forming thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12363999B2Jul 15, 2025

Fin field-effect transistor and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12363976B2Jul 15, 2025

Semiconductor devices and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12206011B2Jan 21, 2025

Dummy gate cutting process and resulting gate structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12170229B2Dec 17, 2024

Semiconductor devices and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12046663B2Jul 23, 2024

Fin field-effect transistor and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12046597B2Jul 23, 2024

Fin field-effect transistor and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11990341B2May 21, 2024

Cut metal gate processes

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11894277B2Feb 6, 2024

Transistor gates and methods of forming thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11848240B2Dec 19, 2023

Method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11757019B2Sep 12, 2023

Dummy gate cutting process and resulting gate structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11626510B2Apr 11, 2023

Fin Field-Effect Transistor and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11527445B2Dec 13, 2022

Semiconductor devices and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11233139B2Jan 25, 2022

Fin field-effect transistor and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10879074B2Dec 29, 2020

Method of forming semiconductor device and semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11967533B2Apr 23, 2024

Semiconductor devices and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10672613B2Jun 2, 2020

Method of forming semiconductor structure and semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

TAIWAN SEMICONDUTOR MFG COMPANY LIMITED

1 patent