Inventor
SMYTHE JOHN A
US41 patents
⚠️ This page may combine multiple inventors who share the name “SMYTHE JOHN A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
31 patentsUS9865456B1Jan 9, 2018
Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structures
MICRON TECHNOLOGY INC401 citations99
US9985049B1May 29, 2018
Arrays of elevationally-extending strings of memory cells and methods of forming memory arrays
MICRON TECHNOLOGY INC21 citations94
US7928577B2Apr 19, 2011
Interconnect structures for integration of multi-layered integrated circuit devices and methods for forming the same
MICRON TECHNOLOGY INC12 citations93
US10903109B2Jan 26, 2021
Methods of forming high aspect ratio openings and methods of forming high aspect ratio features
MICRON TECHNOLOGY INC9 citations86
US10770465B1Sep 8, 2020
Method used in forming integrated circuitry
MICRON TECHNOLOGY INC7 citations84
US9576904B2Feb 21, 2017
Semiconductor devices comprising interconnect structures and methods of fabrication
MICRON TECHNOLOGY INC5 citations84
US11715692B2Aug 1, 2023
Microelectronic devices including conductive rails, and related methods
MICRON TECHNOLOGY INC2 citations73
US11417565B2Aug 16, 2022
Methods of forming high aspect ratio openings and methods of forming high aspect ratio features
MICRON TECHNOLOGY INC3 citations73
US11121258B2Sep 14, 2021
Transistors comprising two-dimensional materials and related semiconductor devices, systems, and methods
MICRON TECHNOLOGY INC2 citations73
US10964532B2Mar 30, 2021
Methods of forming semiconductor devices comprising silicon nitride on high aspect ratio features
MICRON TECHNOLOGY INC2 citations73
US10504917B2Dec 10, 2019
Arrays of elevationally-extending strings of memory cells and methods of forming memory arrays
MICRON TECHNOLOGY INC3 citations73
US12015089B2Jun 18, 2024
Transistors comprising two-dimensional materials and related memory cells and electronic devices
MICRON TECHNOLOGY INC1 citations63
US11651955B2May 16, 2023
Methods of forming silicon nitride including plasma exposure
MICRON TECHNOLOGY INC0 citations63
US11411008B2Aug 9, 2022
Integrated circuity, dram circuitry, methods used in forming integrated circuitry, and methods used in forming DRAM circuitry
MICRON TECHNOLOGY INC0 citations63
US10777562B1Sep 15, 2020
Integrated circuity, DRAM circuitry, methods used in forming integrated circuitry, and methods used in forming DRAM circuitry
MICRON TECHNOLOGY INC1 citations63
US9111932B2Aug 18, 2015
Semiconductor devices comprising interconnect structures and methods of fabrication
MICRON TECHNOLOGY INC1 citations63
US12525534B2Jan 13, 2026
Memory devices including conductive rails, and related methods and electronic systems
MICRON TECHNOLOGY INC0 citations62
US12020979B2Jun 25, 2024
Methods of forming material within openings extending into a semiconductor construction, and semiconductor constructions having fluorocarbon material
MICRON TECHNOLOGY INC0 citations62
US11935782B2Mar 19, 2024
Methods for inhibiting line bending during conductive material deposition, and related apparatus
MICRON TECHNOLOGY INC0 citations62
US11854869B2Dec 26, 2023
Methods of forming high aspect ratio features
MICRON TECHNOLOGY INC0 citations62
US11515198B2Nov 29, 2022
Semiconductor constructions comprising dielectric material, and methods of forming dielectric fill within openings extending into semiconductor constructions
MICRON TECHNOLOGY INC0 citations62
US11270909B2Mar 8, 2022
Apparatus with species on or in conductive material on elongate lines
MICRON TECHNOLOGY INC0 citations62
US10998221B2May 4, 2021
Semiconductor constructions having fluorocarbon material
MICRON TECHNOLOGY INC0 citations62
US10937654B2Mar 2, 2021
Methods of doping a silicon-containing material and methods of forming a semiconductor device
MICRON TECHNOLOGY INC0 citations62
US10763155B2Sep 1, 2020
Semiconductor constructions comprising dielectric material, and methods of forming dielectric fill within openings extending into semiconductor constructions
MICRON TECHNOLOGY INC0 citations52
US10643906B2May 5, 2020
Methods of forming a transistor and methods of forming an array of memory cells
MICRON TECHNOLOGY INC0 citations52
US10388872B2Aug 20, 2019
Memory cell materials and semiconductor device structures
MICRON TECHNOLOGY INC0 citations52
US10153195B1Dec 11, 2018
Semiconductor constructions comprising dielectric material
MICRON TECHNOLOGY INC0 citations52
US9735359B2Aug 15, 2017
Methods of forming a memory cell material, and related methods of forming a semiconductor device structure, memory cell materials, and semiconductor device structures
MICRON TECHNOLOGY INC1 citations52
US11127830B2Sep 21, 2021
Apparatus with multidielectric spacers on conductive regions of stack structures, and related methods
MICRON TECHNOLOGY INC0 citations46
US10319586B1Jun 11, 2019
Methods comprising an atomic layer deposition sequence
MICRON TECHNOLOGY INC0 citations41
ZILOG INC
4 patentsUS6642112B1Nov 4, 2003
Non-oxidizing spacer densification method for manufacturing semiconductor devices
ZILOG INC32 citations92
US6849510B2Feb 1, 2005
Non-oxidizing spacer densification method for manufacturing semiconductor devices
ZILOG INC11 citations73
US6436195B1Aug 20, 2002
Method of fabricating a MOS device
ZILOG INC11 citations73
US6156653ADec 5, 2000
Method of fabricating a MOS device
ZILOG INC10 citations73