P

Inventor

SMYTHE JOHN A

US41 patents
⚠️ This page may combine multiple inventors who share the name “SMYTHE JOHN A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

31 patents
US9865456B1Jan 9, 2018

Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structures

MICRON TECHNOLOGY INC401 citations99
US9985049B1May 29, 2018

Arrays of elevationally-extending strings of memory cells and methods of forming memory arrays

MICRON TECHNOLOGY INC21 citations94
US7928577B2Apr 19, 2011

Interconnect structures for integration of multi-layered integrated circuit devices and methods for forming the same

MICRON TECHNOLOGY INC12 citations93
US10903109B2Jan 26, 2021

Methods of forming high aspect ratio openings and methods of forming high aspect ratio features

MICRON TECHNOLOGY INC9 citations86
US10770465B1Sep 8, 2020

Method used in forming integrated circuitry

MICRON TECHNOLOGY INC7 citations84
US9576904B2Feb 21, 2017

Semiconductor devices comprising interconnect structures and methods of fabrication

MICRON TECHNOLOGY INC5 citations84
US11715692B2Aug 1, 2023

Microelectronic devices including conductive rails, and related methods

MICRON TECHNOLOGY INC2 citations73
US11417565B2Aug 16, 2022

Methods of forming high aspect ratio openings and methods of forming high aspect ratio features

MICRON TECHNOLOGY INC3 citations73
US11121258B2Sep 14, 2021

Transistors comprising two-dimensional materials and related semiconductor devices, systems, and methods

MICRON TECHNOLOGY INC2 citations73
US10964532B2Mar 30, 2021

Methods of forming semiconductor devices comprising silicon nitride on high aspect ratio features

MICRON TECHNOLOGY INC2 citations73
US10504917B2Dec 10, 2019

Arrays of elevationally-extending strings of memory cells and methods of forming memory arrays

MICRON TECHNOLOGY INC3 citations73
US12015089B2Jun 18, 2024

Transistors comprising two-dimensional materials and related memory cells and electronic devices

MICRON TECHNOLOGY INC1 citations63
US11651955B2May 16, 2023

Methods of forming silicon nitride including plasma exposure

MICRON TECHNOLOGY INC0 citations63
US11411008B2Aug 9, 2022

Integrated circuity, dram circuitry, methods used in forming integrated circuitry, and methods used in forming DRAM circuitry

MICRON TECHNOLOGY INC0 citations63
US10777562B1Sep 15, 2020

Integrated circuity, DRAM circuitry, methods used in forming integrated circuitry, and methods used in forming DRAM circuitry

MICRON TECHNOLOGY INC1 citations63
US9111932B2Aug 18, 2015

Semiconductor devices comprising interconnect structures and methods of fabrication

MICRON TECHNOLOGY INC1 citations63
US12525534B2Jan 13, 2026

Memory devices including conductive rails, and related methods and electronic systems

MICRON TECHNOLOGY INC0 citations62
US12020979B2Jun 25, 2024

Methods of forming material within openings extending into a semiconductor construction, and semiconductor constructions having fluorocarbon material

MICRON TECHNOLOGY INC0 citations62
US11935782B2Mar 19, 2024

Methods for inhibiting line bending during conductive material deposition, and related apparatus

MICRON TECHNOLOGY INC0 citations62
US11854869B2Dec 26, 2023

Methods of forming high aspect ratio features

MICRON TECHNOLOGY INC0 citations62
US11515198B2Nov 29, 2022

Semiconductor constructions comprising dielectric material, and methods of forming dielectric fill within openings extending into semiconductor constructions

MICRON TECHNOLOGY INC0 citations62
US11270909B2Mar 8, 2022

Apparatus with species on or in conductive material on elongate lines

MICRON TECHNOLOGY INC0 citations62
US10998221B2May 4, 2021

Semiconductor constructions having fluorocarbon material

MICRON TECHNOLOGY INC0 citations62
US10937654B2Mar 2, 2021

Methods of doping a silicon-containing material and methods of forming a semiconductor device

MICRON TECHNOLOGY INC0 citations62
US10763155B2Sep 1, 2020

Semiconductor constructions comprising dielectric material, and methods of forming dielectric fill within openings extending into semiconductor constructions

MICRON TECHNOLOGY INC0 citations52
US10643906B2May 5, 2020

Methods of forming a transistor and methods of forming an array of memory cells

MICRON TECHNOLOGY INC0 citations52
US10388872B2Aug 20, 2019

Memory cell materials and semiconductor device structures

MICRON TECHNOLOGY INC0 citations52
US10153195B1Dec 11, 2018

Semiconductor constructions comprising dielectric material

MICRON TECHNOLOGY INC0 citations52
US9735359B2Aug 15, 2017

Methods of forming a memory cell material, and related methods of forming a semiconductor device structure, memory cell materials, and semiconductor device structures

MICRON TECHNOLOGY INC1 citations52
US11127830B2Sep 21, 2021

Apparatus with multidielectric spacers on conductive regions of stack structures, and related methods

MICRON TECHNOLOGY INC0 citations46
US10319586B1Jun 11, 2019

Methods comprising an atomic layer deposition sequence

MICRON TECHNOLOGY INC0 citations41

ZILOG INC

4 patents

GREELEY JOSEPH N

2 patents

MILOJEVIC MARKO

1 patent

SANDHU GURTEJ S

1 patent

SMYTHE JOHN A

1 patent

LODESTAR LICENSING GROUP LLC

1 patent