Inventor
PYO SUK-SOO
KR25 patents
⚠️ This page may combine multiple inventors who share the name “PYO SUK-SOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
21 patentsUS7894282B2Feb 22, 2011
Dynamic random access memory device and method of determining refresh cycle thereof
SAMSUNG ELECTRONICS CO LTD8 citations84
US10431300B2Oct 1, 2019
Nonvolatile memory device and operating method of nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD8 citations82
US7263020B2Aug 28, 2007
Memory device capable of refreshing data using buffer and refresh method thereof
SAMSUNG ELECTRONICS CO LTD10 citations82
US7187608B2Mar 6, 2007
System and method for controlling the access and refresh of a memory
SAMSUNG ELECTRONICS CO LTD10 citations82
US11112997B2Sep 7, 2021
Storage device and operating method thereof
SAMSUNG ELECTRONICS CO LTD3 citations73
US10803971B2Oct 13, 2020
Device for supporting error correction code and test method thereof
SAMSUNG ELECTRONICS CO LTD3 citations73
US11139012B2Oct 5, 2021
Resistive memory device having read currents for a memory cell and a reference cell in opposite directions
SAMSUNG ELECTRONICS CO LTD3 citations72
US9899081B2Feb 20, 2018
Resistive memory device and a memory system including the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US9620191B2Apr 11, 2017
Memory device and memory system including the same
SAMSUNG ELECTRONICS CO LTD4 citations72
US10910030B2Feb 2, 2021
Memory device for reducing leakage current
SAMSUNG ELECTRONICS CO LTD4 citations71
US10192618B2Jan 29, 2019
Nonvolatile memory device and operating method thereof
SAMSUNG ELECTRONICS CO LTD2 citations71
US12051456B2Jul 30, 2024
Memory devices and operation methods thereof including a write voltage selectively applied to a well of a column multiplexer circuit
SAMSUNG ELECTRONICS CO LTD2 citations70
US10762958B2Sep 1, 2020
Resistive memory device including a reference cell and method of controlling a reference cell to identify values stored in memory cells
SAMSUNG ELECTRONICS CO LTD4 citations70
US10510393B2Dec 17, 2019
Resistive memory device including reference cell and operating method thereof
SAMSUNG ELECTRONICS CO LTD1 citations62
US10224086B2Mar 5, 2019
Memory device with temperature-dependent reading of a reference cell
SAMSUNG ELECTRONICS CO LTD1 citations62
US7755966B2Jul 13, 2010
Memory device performing a partial refresh operation based on accessed and/or refreshed memory blocks and method thereof
SAMSUNG ELECTRONICS CO LTD3 citations62
US10593402B2Mar 17, 2020
Nonvolatile memory device and operating method thereof
SAMSUNG ELECTRONICS CO LTD1 citations61
US12249976B2Mar 11, 2025
Power switch circuit and non-volatile memory device comprising the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10600466B2Mar 24, 2020
Resistive memory device having reduced chip size and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations52
US10373664B2Aug 6, 2019
Resistive memory device having reduced chip size and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations52
US11727965B2Aug 15, 2023
Nonvolatile memory device, operating method of nonvolatile memory device, and electronic device including nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
PYO SUK-SOO
3 patentsUS9431083B2Aug 30, 2016
Nonvolatile memory device and storage device having the same
PYO SUK-SOO3 citations68
US8208327B2Jun 26, 2012
Semiconductor memory device and data read method thereof
PYO SUK-SOO2 citations60
US8644094B2Feb 4, 2014
Semiconductor memory devices including precharge using isolated voltages
PYO SUK-SOO0 citations39