P

Inventor

PYO SUK-SOO

KR25 patents
⚠️ This page may combine multiple inventors who share the name “PYO SUK-SOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

21 patents
US7894282B2Feb 22, 2011

Dynamic random access memory device and method of determining refresh cycle thereof

SAMSUNG ELECTRONICS CO LTD8 citations84
US10431300B2Oct 1, 2019

Nonvolatile memory device and operating method of nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD8 citations82
US7263020B2Aug 28, 2007

Memory device capable of refreshing data using buffer and refresh method thereof

SAMSUNG ELECTRONICS CO LTD10 citations82
US7187608B2Mar 6, 2007

System and method for controlling the access and refresh of a memory

SAMSUNG ELECTRONICS CO LTD10 citations82
US11112997B2Sep 7, 2021

Storage device and operating method thereof

SAMSUNG ELECTRONICS CO LTD3 citations73
US10803971B2Oct 13, 2020

Device for supporting error correction code and test method thereof

SAMSUNG ELECTRONICS CO LTD3 citations73
US11139012B2Oct 5, 2021

Resistive memory device having read currents for a memory cell and a reference cell in opposite directions

SAMSUNG ELECTRONICS CO LTD3 citations72
US9899081B2Feb 20, 2018

Resistive memory device and a memory system including the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US9620191B2Apr 11, 2017

Memory device and memory system including the same

SAMSUNG ELECTRONICS CO LTD4 citations72
US10910030B2Feb 2, 2021

Memory device for reducing leakage current

SAMSUNG ELECTRONICS CO LTD4 citations71
US10192618B2Jan 29, 2019

Nonvolatile memory device and operating method thereof

SAMSUNG ELECTRONICS CO LTD2 citations71
US12051456B2Jul 30, 2024

Memory devices and operation methods thereof including a write voltage selectively applied to a well of a column multiplexer circuit

SAMSUNG ELECTRONICS CO LTD2 citations70
US10762958B2Sep 1, 2020

Resistive memory device including a reference cell and method of controlling a reference cell to identify values stored in memory cells

SAMSUNG ELECTRONICS CO LTD4 citations70
US10510393B2Dec 17, 2019

Resistive memory device including reference cell and operating method thereof

SAMSUNG ELECTRONICS CO LTD1 citations62
US10224086B2Mar 5, 2019

Memory device with temperature-dependent reading of a reference cell

SAMSUNG ELECTRONICS CO LTD1 citations62
US7755966B2Jul 13, 2010

Memory device performing a partial refresh operation based on accessed and/or refreshed memory blocks and method thereof

SAMSUNG ELECTRONICS CO LTD3 citations62
US10593402B2Mar 17, 2020

Nonvolatile memory device and operating method thereof

SAMSUNG ELECTRONICS CO LTD1 citations61
US12249976B2Mar 11, 2025

Power switch circuit and non-volatile memory device comprising the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US10600466B2Mar 24, 2020

Resistive memory device having reduced chip size and operation method thereof

SAMSUNG ELECTRONICS CO LTD0 citations52
US10373664B2Aug 6, 2019

Resistive memory device having reduced chip size and operation method thereof

SAMSUNG ELECTRONICS CO LTD0 citations52
US11727965B2Aug 15, 2023

Nonvolatile memory device, operating method of nonvolatile memory device, and electronic device including nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations51

PYO SUK-SOO

3 patents

SEO BO-YOUNG

1 patent