Inventor
HA JUNG-MIN
KR12 patents
⚠️ This page may combine multiple inventors who share the name “HA JUNG-MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
9 patentsUS6087257AJul 11, 2000
Methods of fabricating a selectively deposited tungsten nitride layer and metal wiring using a tungsten nitride layer
SAMSUNG ELECTRONICS CO LTD99 citations97
US5723384AMar 3, 1998
Method for manufacturing a capacitor in a semiconductor device using selective tungsten nitride thin film
SAMSUNG ELECTRONICS CO LTD91 citations95
US7326587B2Feb 5, 2008
Semiconductor memory device having capacitor and method of forming the same
SAMSUNG ELECTRONICS CO LTD15 citations92
US6596605B2Jul 22, 2003
Method of forming germanium doped polycrystalline silicon gate of MOS transistor and method of forming CMOS transistor device using the same
SAMSUNG ELECTRONICS CO LTD22 citations92
US5970309AOct 19, 1999
Method of manufacturing a capacitor and a capacitor electrode in semiconductor device
SAMSUNG ELECTRONICS CO LTD36 citations92
US6391749B1May 21, 2002
Selective epitaxial growth method in semiconductor device
SAMSUNG ELECTRONICS CO LTD22 citations89
US6927444B2Aug 9, 2005
Semiconductor memory device having capacitor and method of forming the same
SAMSUNG ELECTRONICS CO LTD14 citations84
US6051492AApr 18, 2000
Method of manufacturing a wiring layer in semiconductor device
SAMSUNG ELECTRONICS CO LTD12 citations73
US6562707B2May 13, 2003
Method of forming a semiconductor device using selective epitaxial growth
SAMSUNG ELECTRONICS CO LTD8 citations72