Inventor
PANG YING
US6 patents
Patents
6 patentsUS9859424B2Jan 2, 2018
Techniques for integration of Ge-rich p-MOS source/drain contacts
INTEL CORP12 citations83
US10541334B2Jan 21, 2020
Techniques for integration of Ge-rich p-MOS source/drain
INTEL CORP2 citations72
US10147817B2Dec 4, 2018
Techniques for integration of Ge-rich p-MOS source/drain
INTEL CORP3 citations72
US10755984B2Aug 25, 2020
Replacement channel etch for high quality interface
INTEL CORP0 citations51
US11476164B2Oct 18, 2022
Integrated circuit structures having differentiated workfunction layers
INTEL CORP0 citations42
US10510848B2Dec 17, 2019
Sub-fin sidewall passivation in replacement channel FinFETS
INTEL CORP0 citations41