P

Inventor

CHIU YI-CHENG

TW35 patents
⚠️ This page may combine multiple inventors who share the name “CHIU YI-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

18 patents
US10535730B2Jan 14, 2020

High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US9680009B2Jun 13, 2017

High voltage semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11145713B2Oct 12, 2021

High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11145709B2Oct 12, 2021

Semiconductor device including a capacitor

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations71
US11942543B2Mar 26, 2024

Semiconductor device structure with high voltage device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11424359B2Aug 23, 2022

Semiconductor device structure with high voltage device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10964781B2Mar 30, 2021

High voltage resistor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10892360B2Jan 12, 2021

Semiconductor device structure with high voltage device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11923425B2Mar 5, 2024

Shielding structure for ultra-high voltage semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11588028B2Feb 21, 2023

Shielding structure for ultra-high voltage semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10879236B2Dec 29, 2020

Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12062687B2Aug 13, 2024

Semiconductor device including a capacitor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11728374B2Aug 15, 2023

Semiconductor device including a capacitor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11688804B2Jun 27, 2023

Semiconductor device with ring-shaped doped region and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11862675B2Jan 2, 2024

High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10297661B2May 21, 2019

High voltage resistor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10679987B2Jun 9, 2020

Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US12387984B2Aug 12, 2025

Test structure and integrated circuit test using same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations44

PIXART IMAGING INC

16 patents
US11706542B2Jul 18, 2023

Pixel circuit outputting time difference data and image data, and operating method of pixel array

PIXART IMAGING INC5 citations85
US11812176B2Nov 7, 2023

Pixel circuit selecting to output time difference data or image data

PIXART IMAGING INC4 citations74
US11317042B2Apr 26, 2022

Image sensor apparatus and processing circuit capable of preventing sampled reset/exposure charges from light illumination as well as achieving lower circuit costs

PIXART IMAGING INC2 citations72
US12513429B2Dec 30, 2025

Optical sensor outputting partial image data of pixel array

PIXART IMAGING INC0 citations62
US12137295B2Nov 5, 2024

Pixel circuit selecting to output time difference data or image data

PIXART IMAGING INC0 citations62
US12052523B2Jul 30, 2024

Pixel circuit outputting time difference data and image data, and operating method thereof

PIXART IMAGING INC0 citations62
US11614359B2Mar 28, 2023

Sensor circuit having identical capacitors to improve sensing efficiency of pixels and operating method thereof

PIXART IMAGING INC0 citations61
US11592330B2Feb 28, 2023

Pixel circuit having capacitor with identical electrodes to improve sensing efficiency and operating method thereof

PIXART IMAGING INC0 citations61
US11592331B2Feb 28, 2023

Pixel circuit to improve sensing efficiency, image sensor using the same and operating method thereof

PIXART IMAGING INC0 citations61
US11287316B2Mar 29, 2022

Circuit to improve sensing efficiency of pixels

PIXART IMAGING INC0 citations61
US11265506B1Mar 1, 2022

Image sensor apparatus and processing circuit capable of preventing sampled reset/exposure charges from light illumination as well as achieving lower circuit costs

PIXART IMAGING INC1 citations61
US10999549B2May 4, 2021

Image sensor, column parallel ADC circuit and A/D conversion method thereof

PIXART IMAGING INC1 citations60
US12347181B2Jul 1, 2025

Neural signal detection circuit outputting time difference data or neural data

PIXART IMAGING INC0 citations52
US11018170B2May 25, 2021

Image sensor and control method for the same

PIXART IMAGING INC0 citations50
US11012653B2May 18, 2021

Image sensor apparatus and method capable of rapidly reading out and processing pixel voltages of pixel array

PIXART IMAGING INC0 citations50
US10609319B2Mar 31, 2020

Image sensor capable of averaging pixel data

PIXART IMAGING INC0 citations40

CHINA GLAZE CO LTD (TAIWAN)

1 patent