Inventor
LIN HUNG-CHOU
TW18 patents
⚠️ This page may combine multiple inventors who share the name “LIN HUNG-CHOU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
16 patentsUS10535730B2Jan 14, 2020
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US9680009B2Jun 13, 2017
High voltage semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11145713B2Oct 12, 2021
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11145709B2Oct 12, 2021
Semiconductor device including a capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations71
US11942543B2Mar 26, 2024
Semiconductor device structure with high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11424359B2Aug 23, 2022
Semiconductor device structure with high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10964781B2Mar 30, 2021
High voltage resistor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10892360B2Jan 12, 2021
Semiconductor device structure with high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11923425B2Mar 5, 2024
Shielding structure for ultra-high voltage semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11588028B2Feb 21, 2023
Shielding structure for ultra-high voltage semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10879236B2Dec 29, 2020
Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12062687B2Aug 13, 2024
Semiconductor device including a capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11728374B2Aug 15, 2023
Semiconductor device including a capacitor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11862675B2Jan 2, 2024
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10297661B2May 21, 2019
High voltage resistor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10679987B2Jun 9, 2020
Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50