Inventor

PALA VIPINDAS

US45 patents

⚠️ This page may combine multiple inventors who share the name “PALA VIPINDAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PALA VIPINDAS

CREE INC

Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling

Vertical power transistor device

Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions

Vertical power transistor device

Layout configurations for integrating schottky contacts into a power transistor device

Field effect transistor devices with protective regions

Field effect transistor devices with buried well protection regions

Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods

Seminconductor device with spreading layer

Vertical power transistor device

Field effect transistor devices with buried well protection regions

Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling

Field effect transistor devices with buried well protection regions

Methods of forming power semiconductor devices having superjunction structures with pillars having implanted sidewalls

Power semiconductor devices having superjunction structures with implanted sidewalls

Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure

Field effect transistor devices with buried well protection regions

Field effect device with enhanced gate dielectric structure

Methods of forming junction termination extension edge terminations for high power semiconductor devices and related semiconductor devices

Monolithically integrated vertical power transistor and bypass diode

Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions

Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layer

Semiconductor device including a power transistor device and bypass diode

MONOLITHIC POWER SYSTEMS INC

Vertical transistor structure with buried channel and resurf regions and method of manufacturing the same

Thin wafer process for improved crystal utilization of wide bandgap devices

Single sided channel mesa power junction field effect transistor

Single sided channel mesa power junction field effect transistor

Junction field effect transistor with integrated high voltage capacitor

Laser induced semiconductor wafer patterning

Vertical transistor structure with buried channel and resurf regions and method of manufacturing the same

Single sided channel mesa power junction field effect transistor

Switching slew rate control of cascode switch device and gate driver thereof

MAXIM INTEGRATED PRODUCTS

LDMOS transistors with breakdown voltage clamps

LDMOS transistors with breakdown voltage clamps

Multi-transistor device including first and second LDMOS transistors having respective drift regions separated in a thickness direction by a shared RESURF layer

Multi-transistor device including first and second LDMOS transistors having respective drift regions separated in a thickness direction by a shared RESURF layer

ALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD

Silicon carbide MOSFET with source ballasting

Silicon carbide trench semiconductor device

Silicon carbide MOSFET with source ballasting

Integration of HVLDMOS with shared isolation region

WOLFSPEED INC

Vertical power transistor device

Superjunction power semiconductor devices formed via ion implantation channeling techniques and related methods

LOGISIC DEVICES INC

Configurations of composite devices comprising of a normally-on FET and a normally-off FET

GLOBAL POWER TECH GROUP INC

Silicon carbide planar MOSFET with wave-shaped channel regions

SEMIQ INCORPORATED

Silicon carbide planar MOSFET with wave-shaped channel regions