Inventor
IMAI FUMIKAZU
JP19 patents
⚠️ This page may combine multiple inventors who share the name “IMAI FUMIKAZU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJI ELECTRIC CO LTD
16 patentsUS9685333B2Jun 20, 2017
Manufacturing method of silicon carbide semiconductor device
FUJI ELECTRIC CO LTD7 citations83
US9129939B2Sep 8, 2015
SiC semiconductor device and method for manufacturing the same
FUJI ELECTRIC CO LTD6 citations83
US10600921B2Mar 24, 2020
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
FUJI ELECTRIC CO LTD2 citations72
US10580870B2Mar 3, 2020
Method of manufacturing silicon carbide semiconductor device
FUJI ELECTRIC CO LTD2 citations72
US9240451B2Jan 19, 2016
Silicon carbide semiconductor device
FUJI ELECTRIC CO LTD4 citations72
US11158503B2Oct 26, 2021
Silicon carbide semiconductor substrate
FUJI ELECTRIC CO LTD0 citations61
US9401411B2Jul 26, 2016
SiC semiconductor device and method for manufacturing the same
FUJI ELECTRIC CO LTD2 citations61
US10615031B2Apr 7, 2020
Silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor substrate
FUJI ELECTRIC CO LTD0 citations51
US10600872B2Mar 24, 2020
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
FUJI ELECTRIC CO LTD0 citations51
US10374050B2Aug 6, 2019
Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device
FUJI ELECTRIC CO LTD0 citations51
US9887270B2Feb 6, 2018
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
FUJI ELECTRIC CO LTD1 citations51
US9263543B2Feb 16, 2016
Method for manufacturing a semiconductor device
FUJI ELECTRIC CO LTD1 citations51
US9159792B2Oct 13, 2015
SiC semiconductor device and method for manufacturing the same
FUJI ELECTRIC CO LTD0 citations51
US10103220B2Oct 16, 2018
Method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations50
US9929232B2Mar 27, 2018
Semiconductor device comprises two or more regions that have a same impurity concentration and differing carrier concentrations
FUJI ELECTRIC CO LTD0 citations50
US10032894B2Jul 24, 2018
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
FUJI ELECTRIC CO LTD0 citations40