Inventor
KLIPP ANDREAS
DE31 patents
⚠️ This page may combine multiple inventors who share the name “KLIPP ANDREAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
BASF SE
19 patentsUS10647900B2May 12, 2020
Chemical-mechanical polishing composition comprising benzotriazole derivatives as corrosion inhibitors
BASF SE3 citations72
US10538724B2Jan 21, 2020
Defect reduction rinse solution containing ammonium salts of sulfoesters
BASF SE3 citations72
US9557652B2Jan 31, 2017
Use of compositions comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
BASF SE3 citations72
US11180719B2Nov 23, 2021
Use of compositions comprising a siloxane-type additive for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
BASF SE2 citations68
US11168239B2Nov 9, 2021
Chemical-mechanical polishing composition comprising benzotriazole derivatives as corrosion inhibitors
BASF SE0 citations61
US12525464B2Jan 13, 2026
Use of a composition and a process for selectively etching silicon
BASF SE0 citations55
US9223221B2Dec 29, 2015
Photoresist stripping and cleaning composition, method of its preparation and its use
BASF SE0 citations51
US11742197B2Aug 29, 2023
Cleavable additives for use in a method of making a semiconductor substrate
BASF SE0 citations50
US10844325B2Nov 24, 2020
Composition for post chemical-mechanical-polishing cleaning
BASF SE0 citations48
US9891520B2Feb 13, 2018
Use of surfactants having at least three short-chain perfluorinated groups in formulations for photo mask cleaning
BASF SE1 citations48
US10865361B2Dec 15, 2020
Composition for post chemical-mechanical-polishing cleaning
BASF SE0 citations47
US12024693B2Jul 2, 2024
Imidazolidinethione-containing compositions for post-ash residue removal and/or for oxidative etching of a layer or mask comprising TiN
BASF SE0 citations46
US11377624B2Jul 5, 2022
Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process
BASF SE0 citations46
US12518960B2Jan 6, 2026
Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 NM or below
BASF SE0 citations45
US12331239B2Jun 17, 2025
Composition and process for selectively etching a layer comprising an aluminium compound in the presence of layers of low-k materials, copper and/or cobalt
BASF SE0 citations45
US12590274B2Mar 31, 2026
Composition and process for selectively etching a hard mask and/or an etch-stop layer in the presence of layers of low-k materials, copper, cobalt and/or tungsten
BASF SE0 citations44
US10385295B2Aug 20, 2019
Compositions for anti pattern collapse treatment comprising gemini additives
BASF SE0 citations41
US12084628B2Sep 10, 2024
Composition comprising a primary and a secondary surfactant, for cleaning or rinsing a product
BASF SE0 citations39
US10844333B2Nov 24, 2020
Composition for post chemical-mechanical-polishing cleaning
BASF SE0 citations36
KLIPP ANDREAS
6 patentsUS9146471B2Sep 29, 2015
Resist stripping compositions and methods for manufacturing electrical devices
KLIPP ANDREAS6 citations71
US8476368B2Jul 2, 2013
Low-k dielectrics obtainable by twin polymerization
KLIPP ANDREAS2 citations62
US9005367B2Apr 14, 2015
Resist stripping compositions and methods for manufacturing electrical devices
KLIPP ANDREAS2 citations61
US9184057B2Nov 10, 2015
Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less
KLIPP ANDREAS3 citations60
US9236256B2Jan 12, 2016
Use of surfactants having at least three short-chain perfluorinated groups RF for manufacturing integrated circuits having patterns with line-space dimensions below 50 NM
KLIPP ANDREAS0 citations41
US9275851B2Mar 1, 2016
Aqueous, nitrogen-free cleaning composition and its use for removing residues and contaminants from semiconductor substrates suitable for manufacturing microelectronic devices
KLIPP ANDREAS0 citations38