Inventor

GANZ MICHAEL P

US3 patents

⚠️ This page may combine multiple inventors who share the name “GANZ MICHAEL P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES INC

2 patents

US8916442B2Dec 23, 2014

Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device

GLOBALFOUNDRIES INC2 citations60

US9099380B2Aug 4, 2015

Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device

GLOBALFOUNDRIES INC0 citations49

KANG LAEGU

1 patent

US9099525B2Aug 4, 2015

Blanket EPI super steep retrograde well formation without Si recess

KANG LAEGU4 citations65