P

Inventor

LIN CHIH-YUNG

TW56 patents
⚠️ This page may combine multiple inventors who share the name “LIN CHIH-YUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

25 patents
US11056396B1Jul 6, 2021

Gate-all-around devices having gate dielectric layers of varying thicknesses and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US11037831B2Jun 15, 2021

Gate structure and method

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10411085B2Sep 10, 2019

Semiconductor device and a method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11387321B2Jul 12, 2022

Integrated circuit structure with non-gated well tap cell

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10665673B2May 26, 2020

Integrated circuit structure with non-gated well tap cell

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US10312334B2Jun 4, 2019

Hybrid doping profile

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations70
US10861928B2Dec 8, 2020

Integrated circuits with capacitors

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations69
US11967532B2Apr 23, 2024

Gate spacers and methods of forming the same in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12057469B2Aug 6, 2024

Semiconductor device and a method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11791217B2Oct 17, 2023

Gate structure and method with dielectric gates and gate-cut features

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11024703B2Jun 1, 2021

Semiconductor device and a method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10998237B2May 4, 2021

Gate structure and method with dielectric gates and gate-cut features

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11908896B2Feb 20, 2024

Integrated circuit structure with non-gated well tap cell

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12255105B2Mar 18, 2025

Gate-all-around devices having gate dielectric layers of varying thicknesses and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11728373B2Aug 15, 2023

High density capacitor implemented using FinFET

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10879172B2Dec 29, 2020

Semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US12243871B2Mar 4, 2025

Integrated circuits with capacitors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11587790B2Feb 21, 2023

Integrated circuits with capacitors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11942375B2Mar 26, 2024

Structure and formation method of semiconductor device with fin structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US11094597B2Aug 17, 2021

Structure and formation method of semiconductor device with fin structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US11127639B2Sep 21, 2021

Structure and formation method of semiconductor device with fin structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10700160B2Jun 30, 2020

Semiconductor device and a method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10629492B2Apr 21, 2020

Gate structure having a dielectric gate and methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10790352B2Sep 29, 2020

High density capacitor implemented using FinFET

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US11210447B2Dec 28, 2021

Reconfiguring layout and sizing for transistor components to simultaneously optimize logic devices and non-logic devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49

ADVANCED OPTOELECTRONIC TECH

11 patents

UNITED MICROELECTRONICS CORP

9 patents

LIN CHIH-YUNG

2 patents

APEX MFG CO LTD

2 patents

LIAO CHI-WEI

1 patent

Showing the top 50 of 56 patents by PatentIndex Score.